A Platform for Large-Scale Graphene Electronics - CVD Growth of Single-Layer Graphene on CVD-Grown Hexagonal Boron Nitride

2013 ◽  
Vol 25 (19) ◽  
pp. 2746-2752 ◽  
Author(s):  
Min Wang ◽  
Sung Kyu Jang ◽  
Won-Jun Jang ◽  
Minwoo Kim ◽  
Seong-Yong Park ◽  
...  
2012 ◽  
Vol 4 (2) ◽  
pp. e6-e6 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  

2012 ◽  
Vol 4 (4) ◽  
pp. e16-e16 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  

2009 ◽  
Vol 79 (4) ◽  
Author(s):  
Thomas Brugger ◽  
Sebastian Günther ◽  
Bin Wang ◽  
J. Hugo Dil ◽  
Marie-Laure Bocquet ◽  
...  

2016 ◽  
Vol 109 (12) ◽  
pp. 122411 ◽  
Author(s):  
Simranjeet Singh ◽  
Jyoti Katoch ◽  
Jinsong Xu ◽  
Cheng Tan ◽  
Tiancong Zhu ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Fumiya Mukai ◽  
Kota Horii ◽  
Ryoya Ebisuoka ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  

AbstractMost studies on moiré superlattices formed from a stack of h-BN (two-dimensional hexagonal boron nitride) and graphene have focused on single layer graphene; graphene with multiple layers is less understood. Here, we show that a moiré superlattice of multilayer graphene shows features arising from the anisotropic Fermi surface affected by the superlattice structure. The moiré superlattice of a h-BN/AB-stacked tetralayer graphene heterostructures exhibited resistivity peaks showing a complicated dependence on the perpendicular electric field. The peaks were not due to secondary Dirac cones forming, but rather opening of the energy gap due to folding of the anisotropic Fermi surface. In addition, superlattice peaks resulted from mixing of light- and heavy-mass bilayer-like bands via the superlattice potential. The gaps did not open on the boundary of the superlattice Brillouin zone, but rather opened inside it, which reflected the anisotropy of the Fermi surface of multilayer graphene.


2013 ◽  
Vol 790 ◽  
pp. 7-10 ◽  
Author(s):  
Hui Gao ◽  
Yin Zhang

Recently, oxidized chemical vapor deposition (CVD) growth graphene has drawn much attention due to its potential applications in the field of optoelectronics. In this article, we report a simple, scalable and efficient method to synthesize oxidized CVD growth single-layer graphene by the strong acid treatment. The results indicate that oxidation process successfully introduced more defects and oxygen-containing groups into the lattice of graphene.


2011 ◽  
Vol 98 (7) ◽  
pp. 071905 ◽  
Author(s):  
Chul Lee ◽  
Joo Youn Kim ◽  
Sukang Bae ◽  
Keun Soo Kim ◽  
Byung Hee Hong ◽  
...  

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