Band Alignment Tailoring of InAs1−xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition

Nano Letters ◽  
2010 ◽  
Vol 10 (8) ◽  
pp. 3052-3056 ◽  
Author(s):  
J. He ◽  
C. J. Reyner ◽  
B. L. Liang ◽  
K. Nunna ◽  
D. L. Huffaker ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Alignment ◽  
Type I ◽  
Type Ii

Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots

JETP Letters ◽  
2014 ◽  
Vol 99 (2) ◽  
pp. 76-81 ◽  
Author(s):  
D. S. Abramkin ◽  
V. T. Shamirzaev ◽  
M. A. Putyato ◽  
A. K. Gutakovskii ◽  
T. S. Shamirzaev
Keyword(s):  
Quantum Dots ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Self Assembled

Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots

2003 ◽  
Vol 72 (12) ◽  
pp. 3271-3275 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Hiroshi Murata ◽  
Shinji Koh ◽  
Motoyoshi Baba ◽  
Hidefumi Akiyama ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Self Assembled

Quasi-Type II Carrier Distribution in CdSe/CdS Core/Shell Quantum Dots with Type I Band Alignment

2018 ◽  
Vol 122 (22) ◽  
pp. 12038-12046 ◽  
Author(s):  
Li Wang ◽  
Kouhei Nonaka ◽  
Tomoki Okuhata ◽  
Tetsuro Katayama ◽  
Naoto Tamai
Keyword(s):  
Quantum Dots ◽  
Band Alignment ◽  
Core Shell ◽  
Type I ◽  
Type Ii ◽  
Carrier Distribution

Optical signatures of type I–type II band alignment transition in Cd(Se,Te)/ZnTe self-assembled quantum dots

2020 ◽  
Vol 117 (11) ◽  
pp. 113101
Author(s):  
Piotr Baranowski ◽  
Małgorzata Szymura ◽  
Grzegorz Karczewski ◽  
Marta Aleszkiewicz ◽  
Aleksander Rodek ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Self Assembled

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

scholarly journals Surface plasmon enhanced energy transfer between type I CdSe/ZnS and type II CdSe/ZnTe quantum dots

2010 ◽  
Vol 96 (7) ◽  
pp. 071906 ◽  
Author(s):  
C. H. Wang ◽  
C. W. Chen ◽  
Y. T. Chen ◽  
C. M. Wei ◽  
Y. F. Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Transfer ◽  
Surface Plasmon ◽  
Type I ◽  
Type Ii

scholarly journals Efficient Photocatalytic Hydrogen Evolution via Band Alignment Tailoring: Controllable Transition from Type-I to Type-II

Small ◽  
2017 ◽  
Vol 13 (41) ◽  
pp. 1702163 ◽  
Author(s):  
Zhongzhou Cheng ◽  
Fengmei Wang ◽  
Tofik Ahmed Shifa ◽  
Chao Jiang ◽  
Quanlin Liu ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Photocatalytic Hydrogen Evolution

scholarly journals Ultrafast Charge Separation in Bilayer WS2/Graphene Heterostructure Revealed by Time- and Angle-Resolved Photoemission Spectroscopy

2021 ◽  
Vol 9 ◽  
Author(s):  
Razvan Krause ◽  
Mariana Chávez-Cervantes ◽  
Sven Aeschlimann ◽  
Stiven Forti ◽  
Filippo Fabbri ◽  
...  
Keyword(s):  
Charge Separation ◽  
Graphene Layer ◽  
Optoelectronic Devices ◽  
Visible Spectral Range ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Type I ◽  
Type Ii ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Indirect Band Gap

Efficient light harvesting devices need to combine strong absorption in the visible spectral range with efficient ultrafast charge separation. These features commonly occur in novel ultimately thin van der Waals heterostructures with type II band alignment. Recently, ultrafast charge separation was also observed in monolayer WS2/graphene heterostructures with type I band alignment. Here we use time- and angle-resolved photoemission spectroscopy to show that ultrafast charge separation also occurs at the interface between bilayer WS2 and graphene indicating that the indirect band gap of bilayer WS2 does not affect the charge transfer to the graphene layer. The microscopic insights gained in the present study will turn out to be useful for the design of novel optoelectronic devices.

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