Localized Current Injection and Submicron Organic Light-Emitting Device on a Pyramidal Atomic Force Microscopy Tip

Nano Letters ◽  
2007 ◽  
Vol 7 (12) ◽  
pp. 3645-3649 ◽  
Author(s):  
Yiying Zhao ◽  
Kwang H. An ◽  
Shuo Chen ◽  
Brendan O'Connor ◽  
Kevin P. Pipe ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Injection ◽  
Light Emitting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Organic Light

The topography of organic light-emitting diode-component functional layers as studied by atomic force microscopy

2004 ◽  
Vol 14 (4) ◽  
pp. 155-157 ◽  
Author(s):  
Oksana V. Kotova ◽  
Svetlana V. Eliseeva ◽  
Elena V. Perevedentseva ◽  
Tatyana F. Limonova ◽  
Raida A. Baigeldieva ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Organic Light

scholarly journals Characterisation of InGaN by Photoconductive Atomic Force Microscopy

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1794 ◽  
Author(s):  
Thomas Weatherley ◽  
Fabien Massabuau ◽  
Menno Kappers ◽  
Rachel Oliver
Keyword(s):  
Atomic Force Microscopy ◽  
Cross Sections ◽  
Indium Content ◽  
Light Emitting ◽  
Force Microscopy ◽  
Turn On ◽  
Atomic Force ◽  
Voltage Curve ◽  
Current Voltage Curve ◽  
The Impact

Nanoscale structure has a large effect on the optoelectronic properties of InGaN, a material vital for energy saving technologies such as light emitting diodes. Photoconductive atomic force microscopy (PC-AFM) provides a new way to investigate this effect. In this study, PC-AFM was used to characterise four thick (∼130 nm) In x Ga 1 − x N films with x = 5%, 9%, 12%, and 15%. Lower photocurrent was observed on elevated ridges around defects (such as V-pits) in the films with x ≤ 12 %. Current-voltage curve analysis using the PC-AFM setup showed that this was due to a higher turn-on voltage on these ridges compared to surrounding material. To further understand this phenomenon, V-pit cross sections from the 9% and 15% films were characterised using transmission electron microscopy in combination with energy dispersive X-ray spectroscopy. This identified a subsurface indium-deficient region surrounding the V-pit in the lower indium content film, which was not present in the 15% sample. Although this cannot directly explain the impact of ridges on turn-on voltage, it is likely to be related. Overall, the data presented here demonstrate the potential of PC-AFM in the field of III-nitride semiconductors.

REAL-TIME VISUALIZATION OF MORPHOLOGICAL EVOLUTION OF N, N'-di(naphthalene-1-yl)-N, N'-diphthalbenzidine THIN FILMS: VARIABLE TEMPERATURE ATOMIC FORCE MICROSCOPY STUDY

2002 ◽  
Vol 01 (05n06) ◽  
pp. 725-730 ◽  
Author(s):  
M. S. XU ◽  
J. B. XU ◽  
J. AN
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Morphological Evolution ◽  
Variable Temperature ◽  
Glassy State ◽  
Microscopy Study ◽  
Light Emitting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Real Time Visualization

Variable temperature tapping mode atomic force microscopy is exploited to in situ visualize the morphological evolution of N, N'-di(naphthalene-1-yl)-N, N'-diphthalbenzidine (NPB) thin film. The apparent glass transition of the NPB thin film initially occurred at 60°C, proceeded until 95°C, and crystallization from the glassy state quickly appeared at 135°C. The NPB thin film gradually melted and disappeared when the temperature was above 175°C, revealing the underlying layer. These observations are technically helpful and significant to gauge the temperature dependent lifetime and luminance of organic light-emitting diodes.

Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy

2016 ◽  
Vol 42 ◽  
pp. 174-178 ◽  
Author(s):  
F. Giannazzo ◽  
G. Fisichella ◽  
A. Piazza ◽  
S. Di Franco ◽  
I.P. Oliveri ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Injection ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Local nanotip arrays sculptured by atomic force microscopy to enhance the light-output efficiency of GaN-based light-emitting diode structures

2014 ◽  
Vol 25 (19) ◽  
pp. 195401 ◽  
Author(s):  
Chun-Ying Huang ◽  
Yung-Chi Yao ◽  
Ya-Ju Lee ◽  
Tai-Yuan Lin ◽  
Wen-Jang Kao ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Emitting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Output Efficiency

scholarly journals Slot-Die Coating of Double Polymer Layers for the Fabrication of Organic Light Emitting Diodes

Micromachines ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 53 ◽  
Author(s):  
Amruth C ◽  
Marco Colella ◽  
Jonathan Griffin ◽  
James Kingsley ◽  
Nicholas Scarratt ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Processing Parameters ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Force Microscopy ◽  
Slot Die Coating ◽  
Atomic Force ◽  
Organic Light ◽  
Slot Die

This study presents the slot-die coating process of two layers of organic materials for the fabrication of organic light emitting diodes (OLEDs). Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), which is commonly used in OLEDs and in organic photovoltaic devices as the hole injection layer (HIL), has been deposited via slot-die coating. Uniform films of PEDOT:PSS were obtained after optimizing the slot-die processing parameters: substrate temperature, coating speed, and ink flow rate. The film quality was examined using optical microscopy, profilometry, and atomic force microscopy. Further, poly(9,9-dioctylfluorene) (F8) and poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT), a well know polymer blend F8:F8BT, which is used as an emissive layer in OLEDs, has been slot-die coated. The optoelectronic properties of the slot-die coated F8:F8BT films were examined by means of photoluminescence (PL) and electroluminescence (EL) studies. The fabricated OLEDs, consisting of slot-die coated PEDOT:PSS and F8:F8BT films, were characterized to record the brightness and current efficiency.

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