Synthesis of Single-Crystalline Zn Metal Nanowires Utilizing Cold-Wall Physical Vapor Deposition

Nano Letters ◽  
2007 ◽  
Vol 7 (8) ◽  
pp. 2540-2544 ◽  
Author(s):  
Michael Kast ◽  
Philipp Schroeder ◽  
Youn J. Hyun ◽  
Peter Pongratz
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Metal Nanowires ◽  
Cold Wall ◽  
Single Crystalline

scholarly journals Ultrahigh Strength Single Crystalline Nanowhiskers Grown by Physical Vapor Deposition

Nano Letters ◽  
2009 ◽  
Vol 9 (8) ◽  
pp. 3048-3052 ◽  
Author(s):  
Gunther Richter ◽  
Karla Hillerich ◽  
Daniel S. Gianola ◽  
Reiner Mönig ◽  
Oliver Kraft ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Single Crystalline ◽  
Ultrahigh Strength

Synthesis of Supported Single-Crystalline Organic Nanowires by Physical Vapor Deposition

2008 ◽  
Vol 20 (24) ◽  
pp. 7371-7373 ◽  
Author(s):  
Ana Borras ◽  
Myriam Aguirre ◽  
Oliver Groening ◽  
Carlos Lopez-Cartes ◽  
Pierangelo Groening
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Single Crystalline

A high-performance fully nanostructured individual CdSe nanotube photodetector with enhanced responsivity and photoconductive gain

2017 ◽  
Vol 5 (28) ◽  
pp. 7057-7066 ◽  
Author(s):  
Qinwei An ◽  
Xianquan Meng ◽  
Ke Xiong ◽  
Yunlei Qiu
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Ambient Pressure ◽  
Volume Ratio ◽  
Deposition Process ◽  
Single Crystalline ◽  
Photoconductive Gain ◽  
One Step ◽  
Physical Vapor Deposition Process

Single-crystalline CdSe nanotubes with a perfect hollow tubular architecture and higher surface-to-volume ratio were synthesized via a simplified one-step ambient pressure physical vapor deposition process and utilized to fabricate an individual CdSe nanotube photodetector with enhanced responsivity and photoconductive gain.

Organic Nonlinear Optical Single-Crystalline Thin Film Grown by Physical Vapor Deposition for Terahertz Generation

2018 ◽  
Vol 18 (7) ◽  
pp. 4029-4036 ◽  
Author(s):  
Hirohisa Uchida ◽  
Ryo Yamazaki ◽  
Kengo Oota ◽  
Koutarou Okimura ◽  
Tsubasa Minami ◽  
...  
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Nonlinear Optical ◽  
Terahertz Generation ◽  
Single Crystalline

Single-crystalline AlN growth on sapphire using physical vapor deposition

2011 ◽  
Vol 375 (6) ◽  
pp. 1000-1004 ◽  
Author(s):  
Andres M. Cardenas-Valencia ◽  
Shinzo Onishi ◽  
Benjamin Rossie
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Single Crystalline

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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