Morphology- and Orientation-Controlled Gallium Arsenide Nanowires on Silicon Substrates

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 39-44 ◽  
Author(s):  
Soo-Ghang Ihn ◽  
Jong-In Song ◽  
Tae-Wook Kim ◽  
Dong-Seok Leem ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Substrates

scholarly journals Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates

2017 ◽  
Vol 3 (5 (87)) ◽  
pp. 54-61 ◽  
Author(s):  
Stepan Novosyadlyj ◽  
Bogdan Dzundza ◽  
Volodymyr Gryga ◽  
Svyatoslav Novosyadlyj ◽  
Mykhailo Kotyk ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Substrates

Microstructural characterization of patterned gallium arsenide grown on 〈001〉 silicon substrates

1987 ◽  
Vol 51 (1) ◽  
pp. 18-20 ◽  
Author(s):  
R. J. Matyi ◽  
H. Shichijo ◽  
T. M. Moore ◽  
H‐L. Tsai
Keyword(s):  
Gallium Arsenide ◽  
Microstructural Characterization ◽  
Silicon Substrates

Mechanical stress in gallium‐arsenide on silicon substrates

1994 ◽  
Vol 76 (3) ◽  
pp. 1989-1991 ◽  
Author(s):  
B. Budnick ◽  
K. Wilke ◽  
G. Heymann
Keyword(s):  
Gallium Arsenide ◽  
Mechanical Stress ◽  
Silicon Substrates

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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