Reactive Formation of Zircon Inclusion Pigments by Deposition and Subsequent Annealing of a Zirconia and Silica Double Shell

Langmuir ◽  
2009 ◽  
Vol 25 (23) ◽  
pp. 13295-13297 ◽  
Author(s):  
Feng Zhao ◽  
Yanfeng Gao ◽  
Hongjie Luo
Keyword(s):  
Subsequent Annealing ◽  
Zircon Inclusion

The scandium-rich indide Sc50Pt13.47In2.53

2020 ◽  
Vol 75 (6-7) ◽  
pp. 715-720 ◽  
Author(s):  
Nataliya L. Gulay ◽  
Jutta Kösters ◽  
Yaroslav M. Kalychak ◽  
Rainer Pöttgen
Keyword(s):  
Single Crystal ◽  
Intermetallic Phases ◽  
Subsequent Annealing ◽  
Induction Melting ◽  
X Ray

AbstractThe scandium-rich indide Sc50Pt13.47In2.53 was obtained by induction melting of the elements and subsequent annealing. The structure of Sc50Pt13.47In2.53 has been refined from single-crystal X-ray diffractometer data: Fm$\overline{3}$, a = 1774.61(3) pm, wR2 = 0.0443, 1047 F2 values and 35 variables. Sc50Pt13.47In2.53 is isopointal with the intermetallic phases Sc50Co12.5In3.5, Sc50Rh13.3In2.7, Sc50Ir13.6In2.4, Ag7+xMg26−x and Ga4.55Mg21.85Pd6.6 (Pearson code cF264 and Wyckoff sequence ih2fecba). Two of the eight crystallographic sites in the structure show mixed occupancies: M1 (≡Pt20.70In10.30) and M2 (≡Pt30.76In20.24). The structure contains four basic polyhedra: M2@Sc8 cubes, Pt1@Sc10 sphenocorona and slightly distorted M1@Sc12 and In3@Sc12 icosahedra. The polyhedra are condensed via common scandium corners and edges. The various Sc–Sc distances range from 302–334 pm and are indicative of substantial Sc–Sc bonding, stabilizing the Sc50Pt13.47In2.53 structure.

Selective gate recess etching of GaInAs/AlInAs based HEMTs using a CH4/H2 plasma without subsequent annealing

1994 ◽  
Vol 30 (15) ◽  
pp. 1251-1252 ◽  
Author(s):  
K.M. Thomas ◽  
W. Bächtold ◽  
W. Patrick
Keyword(s):  
Subsequent Annealing ◽  
Gate Recess

Effects of Se implantation on the compositional disordering of GaAs-AlAs superlattices

1985 ◽  
Vol 56 ◽  
Author(s):  
T. NAKAMURA ◽  
S. KOMIYA ◽  
T. INATA ◽  
S. MUTO ◽  
S. HIYAMIZU
Keyword(s):  
Thermal Diffusion ◽  
Raman Spectra ◽  
Low Dose ◽  
Phonon Frequency ◽  
Gaas Layer ◽  
Probable Mechanism ◽  
Subsequent Annealing ◽  
Alas Layer

AbstractThe LO phonon frequency evaluated from Raman spectra identifies two compositional disordering mechanisms in GaAs-AlAs superlattices. For a high Se dose, the LO phonons of the Al0.5Ga0.5As alloy are observed from the asimplanted samples. That means the compositional disordering occurred just by Se implantation. The probable mechanism for this disordering is the implantation of Ga atoms into the AlAs layer and of Al atoms into the GaAs layer. The superlattices implanted at a low dose are disordered by the subsequent annealing. The mechanism is the enhanced interdiffusion of both Ga and Al atoms between the GaAs and AlAs layers by Se thermal diffusion.

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