Submicron Scale Patterning in Sintered Silica Colloidal Crystal Films Using a Focused Ion Beam

Langmuir ◽  
2008 ◽  
Vol 24 (18) ◽  
pp. 10532-10536 ◽  
Author(s):  
Jeffrey L. Moran ◽  
Philip M. Wheat ◽  
Jonathan D. Posner
1990 ◽  
Vol 199 ◽  
Author(s):  
Kyung-ho Park

ABSTRACTA procedure for preparing cross-sectional TEM specimens by focused ion beam etching (FIB) of specific regions on an integrated circuit chip is outlined. The investigation of the morphology, structure and local chemistry of precisely selected regions of semiconductor devices becomes increasingly important since the lateral dimensions and layer thickness of device structures are continually being reduced. The standard technique of preparing specimens for TEM, whether planar or cross-sectional, cannot select particular small regions. Some techniques and a number of tools and fixtures have been proposed which allow us to prepare TEM specimen of prespecified locations in complex devices. Most of these techniques, however, are still very difficult, tedious process and time consuming.A new technique has been proposed recently involving the use of FIB. The technique ensures that the preselected area of submicron scale will be located in the electron transparent section used for TEM imaging, in preparation turn-around time of about two hours. The TEM imaging of specific contacts via hole in a VLSI chip is illustrated.


2019 ◽  
Vol 91 (9) ◽  
pp. 6080-6087 ◽  
Author(s):  
Qianqian Su ◽  
Feng Wu ◽  
Pengfei Xu ◽  
Ao Dong ◽  
Chang Liu ◽  
...  

2015 ◽  
Vol 120 (1) ◽  
pp. 274-280 ◽  
Author(s):  
Yutaka Yamada ◽  
Koji Takahashi ◽  
Tatsuya Ikuta ◽  
Takashi Nishiyama ◽  
Yasuyuki Takata ◽  
...  

2007 ◽  
Vol 15 (1) ◽  
pp. 18-19
Author(s):  
A. Thesen ◽  
H. Hoffmeister ◽  
M. Schumann ◽  
P. Gnauck

Recent developments in nano- and semiconductor technology have substantially increased the demand for accurate and efficient site specific cross-sectioning of specimens and preparation of TEM samples. Moreover, nano-research is facing new challenges for manipulation, observation, and modification of devices on a submicron scale. At the same time in materials science a new focus on analytical nanoscale investigations—not only of specimen surfaces and cross sections—but on sample volumes is emerging.These demanding requirements can be met if a focused ion beam (FIB) column for nanoscale structuring is combined with a high resolution SEM that is used to monitor the FIB milling and deposition process on a nanometer scale. Such an integrated Cross-Beam® system enables the high resolution observation and direct control of the FIB milling process in real time. Using this concept it is possible to prepare site specific TEM samples and cross sections with nano-scale accuracy. Such a system can be complemented with a gas injection system (GIS), for deposition and enhanced etching of specific materials, as well as, in-situ micro manipulation systems, and analytical detectors such as EDX and EBSP systems.


2000 ◽  
Vol 612 ◽  
Author(s):  
R. Spolenak ◽  
D. L. Barr ◽  
M. E. Gross ◽  
K. Evans-Lutterodt ◽  
W. L. Brown ◽  
...  

AbstractThe microstructure of narrow metal conductors in the electrical interconnections on IC chips has often been identified as of major importance in the reliability of these devices. The stresses and stress gradients that develop in the conductors as a result of thermal expansion differences in the materials and of electromigration at high current densities are believed to be strongly dependent on the details of the grain structure. The present work discusses new techniques based on microbeam x-ray diffraction (MBXRD) that have enabled measurement not only of the microstructure of totally encapsulated conductors but also of the local stresses in them on a micron and submicron scale. White x-rays from the Advanced Light Source were focused to a micron spot size by Kirkpatrick-Baez mirrors. The sample was stepped under the micro-beam and Laue images obtained at each sample location using a CCD area detector. Microstructure and local strain were deduced from these images. Cu lines with widths ranging from 0.8 [.proportional]m to 5 [.proportional]m and thickness of 1 [.proportional]m were investigated. Comparisons are made between the capabilities of MBXRD and the well established techniques of broad beam XRD, electron back scatter diffraction (EBSD) and focused ion beam imagining (FIB).


2010 ◽  
Vol 25 (3) ◽  
pp. 563-575 ◽  
Author(s):  
Yong Yang ◽  
Jianchao Ye ◽  
Jian Lu ◽  
Qing Wang ◽  
Peter K. Liaw

In this article, the shear-banding behavior in bulk metallic-glasses (BMGs) is studied using a focused ion beam (FIB)-based nanoindentation method, which involves cylindrical nanoindentation of a FIB-milled BMG microlamella and is capable of revealing the subsurface shear-band patterns down to the submicron scale. The results of the current study on a Zr-based BMG clearly show that short shear bands, with the lengths of a few hundred nanometers, could be severely kinked before growing into a longer one, which implies that structural heterogeneity plays an important role in the microplasticity of BMGs. Furthermore, through the three-dimensional finite-element simulation combined with the theoretical calculation based on the Mohr–Coulomb law, it is found that the yield strengths exhibit a large scatter as a consequence of the structural heterogeneity when microplasticity occurs in the Zr-based BMG, which is consistent with our recent findings obtained from the microcompression experiments.


2017 ◽  
Vol 9 (48) ◽  
pp. 42075-42083
Author(s):  
Jennifer L. Russell ◽  
Thomas E. Mallouk

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