Adsorption Isotherms and Structure of Cationic Surfactants Adsorbed on Mineral Oxide Surfaces Prepared by Atomic Layer Deposition

Langmuir ◽  
2013 ◽  
Vol 29 (48) ◽  
pp. 14748-14755 ◽  
Author(s):  
Thipvaree Wangchareansak ◽  
Vincent S. J. Craig ◽  
Shannon M. Notley
Keyword(s):  
Atomic Layer Deposition ◽  
Adsorption Isotherms ◽  
Cationic Surfactants ◽  
Atomic Layer ◽  
Oxide Surfaces ◽  
Layer Deposition ◽  
Mineral Oxide Surfaces

Nucleation and Growth of Noble Metals on Oxide Surfaces Using Atomic Layer Deposition

2019 ◽  
Vol 3 (15) ◽  
pp. 271-278 ◽  
Author(s):  
J. W. Elam ◽  
A. V. V. Zinovev ◽  
Michael J. Pellin ◽  
David J. Comstock ◽  
Mark C. Hersam
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metals ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Oxide Surfaces ◽  
Layer Deposition

Stabilizing Small Molecules on Metal Oxide Surfaces Using Atomic Layer Deposition

Nano Letters ◽  
2013 ◽  
Vol 13 (10) ◽  
pp. 4802-4809 ◽  
Author(s):  
Kenneth Hanson ◽  
Mark D. Losego ◽  
Berç Kalanyan ◽  
Gregory N. Parsons ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Small Molecules ◽  
Atomic Layer ◽  
Oxide Surfaces ◽  
Metal Oxide Surfaces ◽  
Layer Deposition

Nucleation and Growth During Tungsten Atomic Layer Deposition on Oxide Surfaces

2001 ◽  
Vol 672 ◽  
Author(s):  
S. M. George ◽  
J.W. Elam ◽  
R.K. Grubbs ◽  
C.E. Nelson
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Oxide Surfaces ◽  
Layer By Layer ◽  
Growth Region ◽  
Tungsten Film ◽  
Layer Deposition ◽  
Initial Nucleation ◽  
Reaction Cycles

ABSTRACTNucleation and growth has been studied during tungsten (W) atomic layer deposition (ALD) on oxide surfaces. Auger electron spectroscopy (AES) was utilized to examine the deposition of W during the sequential (A) WF6 and (B) Si2H6 reaction cycles that define W ALD. The AES results displayed an initial nucleation period of ∼10 AB cycles to deposit one tungsten monolayer on SiO2. Subsequently, the W and Si AES signals grew and oscillated dramatically versus WF6 and Si2H6 exposures. The increase in the W AES signal in the growth region was consistent with a W ALD growth rate of 3.5 Å per AB cycle. An examination of the oxygen and tungsten AES signals versus AB cycles indicated that W ALD displayed nearly ideal “layer-by-layer”, Frank- van der Merwe growth after the nucleation period. On Al2O3, the AES results displayed a much shorter nucleation period for W ALD. Only 3 AB cycles were required to deposit one tungsten monolayer. Subsequently, the tungsten film grew at a rate of 3.6 Å per AB cycle. The initial nucleation period and growth mechanism during ALD are important because they will affect the roughness of the resulting ALD film.

Investigation of the Hydrophobic Nature of Metal Oxide Surfaces Created by Atomic Layer Deposition

Langmuir ◽  
2019 ◽  
Vol 35 (17) ◽  
pp. 5762-5769 ◽  
Author(s):  
Jongyoon Bae ◽  
Izabela A. Samek ◽  
Peter C. Stair ◽  
Randall Q. Snurr
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Oxide Surfaces ◽  
Metal Oxide Surfaces ◽  
Layer Deposition ◽  
Hydrophobic Nature
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