Properties of Hybridized DNA Arrays on Single-Crystalline Undoped and Boron-Doped (100) Diamonds Studied by Atomic Force Microscopy in Electrolytes

Langmuir ◽  
2007 ◽  
Vol 23 (14) ◽  
pp. 7626-7633 ◽  
Author(s):  
Bohuslav Rezek ◽  
Dongchan Shin ◽  
Christoph E. Nebel
Keyword(s):  
Atomic Force Microscopy ◽  
Dna Arrays ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Boron Doped

Current Images of CdSe Colloidal Nanodots Observed by Conductive-tip Atomic Force Microscopy

2001 ◽  
Vol 692 ◽  
Author(s):  
Ichiro Tanaka ◽  
Eri Kawasaki ◽  
O. Ohtsuki ◽  
M. Hara ◽  
H. Asami ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electronic Properties ◽  
Etch Pits ◽  
Self Assembled Monolayer ◽  
Contact Mode ◽  
Current Image ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Tunneling Resistance

AbstractWe have fabricated submonolayer-thick films of CdSe colloidal nanodots in order to investigate electronic properties of individual nanodots by conductive-tip atomic force microscopy (AFM). Topographic and current images of isolated single CdSe colloidal dots on single crystalline Au (111) surface which was covered with dodecanethiol self-assembled monolayer were obtained by AFM operating in contact mode with a conductive tip under appropriate bias voltages. In the current image, it is found that the dot regions have higher electric resistances due to tunneling resistance through the CdSe dots. We also found 10 nm-scale electric inhomogeneity around the dots, which may corresponds to the previously reported etch-pits of Au (111) surfaces formed during the deposition of the dodecanethiol molecules.

Boron-doped Diamond Electrodes: Electrochemical, Atomic Force Microscopy and Raman Study towards Corrosion-modifications at Nanoscale

2015 ◽  
Vol 179 ◽  
pp. 626-636 ◽  
Author(s):  
Ladislav Kavan ◽  
Zuzana Vlckova Zivcova ◽  
Vaclav Petrak ◽  
Otakar Frank ◽  
Pavel Janda ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Diamond Electrodes ◽  
Boron Doped Diamond ◽  
Force Microscopy ◽  
Atomic Force ◽  
Boron Doped ◽  
Raman Study

Nanoindentation of Silicon

2008 ◽  
Vol 604-605 ◽  
pp. 29-36 ◽  
Author(s):  
Péter M. Nagy ◽  
P. Horváth ◽  
Gábor Pető ◽  
Erika Kálmán
Keyword(s):  
Atomic Force Microscopy ◽  
Phase Transformation ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cube Corner ◽  
Loading And Unloading

The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young’s modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.

AFM Studies of Ni Electrodeposits on GaAs

2005 ◽  
Vol 11 (S03) ◽  
pp. 154-157 ◽  
Author(s):  
V. C. Zoldan ◽  
D. M. Kirkwood ◽  
G. Zangari ◽  
M. L. Munford ◽  
W. Figueiredo ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystal ◽  
Deposition Rate ◽  
Correlation Length ◽  
Growth Mechanism ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Crystal Gaas

In this study, the surface morphology of electrodeposited Ni on single crystal GaAs (001) was investigated by atomic force microscopy (AFM). The images show granular deposits with stepped contours typical of single-crystalline grains. The correlation length correlates very well with the size of the grains, indicating that the layers grow as columns with diameter increasing with thickness. This growth mechanism is observed for layers with thicknesses in the range of 10 to 500 nm at a deposition rate of ~0.5 nm/s.

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