Contact Angle of Water on Polystyrene Thin Films:  Effects of CO2Environment and Film Thickness

Langmuir ◽  
2007 ◽  
Vol 23 (19) ◽  
pp. 9785-9793 ◽  
Author(s):  
Yuan Li ◽  
Joseph Q. Pham ◽  
Keith P. Johnston ◽  
Peter F. Green
1985 ◽  
Vol 47 ◽  
Author(s):  
David J. Srolovitz ◽  
S. A. Safran

ABSTRACTThin films can break up into islands only if they are perturbed by substrate-intersecting perturbations. Grain boundary grooves and vertex pits are typical defects which nucleate holes in these films. Holes which exceed a critical size - proportional to the ratio of the film thickness to the equilibrium contact angle - grow, eventually disconnecting the film.


1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


2018 ◽  
Author(s):  
Nicholas Marshall

A set of experiments in surface-initiated ring-opening metathesis polymerization, including end-functionalization of growing brushes and contact angle/cyclic voltammetry measurements. We report preparation and CV of two different conjugated polymer films, and several endgroup and sidechain functionalization experiments using cross-metathesis and active ester substitution.<br>


Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.


Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.


2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

2019 ◽  
Vol 60 ◽  
pp. 124-141 ◽  
Author(s):  
Naser Ali ◽  
Joao Amaral Teixeira ◽  
Abdulmajid Addali

This research investigates the effect of surface roughness, water temperature, and pH value on the wettability behaviour of copper surfaces. An electron beam physical vapour deposition technique was used to fabricate 25, 50, and 75 nm thin films of copper on the surface of copper substrates. Surface topographical analysis, of the uncoated and coated samples, was performed using an atomic force microscopy device to observe the changes in surface microstructure. A goniometer device was then employed to examine the surface wettability of the samples by obtaining the static contact angle between the liquid and the attached surface using the sessile drops technique. Waters of pH 4, 7, and 9 were employed as the contact angle testing fluids at a set of fixed temperatures that ranged from 20°C to 60°C. It was found that increasing the deposited film thickness reduces the surface roughness of the as-prepared copper surfaces and thus causing the surface wettability to diverge from its initial hydrophobic nature towards the hydrophilic behaviour region. A similar divergence behaviour was seen with the rise in temperature of water of pH 4, and 9. In contrast, the water of pH 7, when tested on the uncoated surface, ceased to reach a contact angle below 90o. It is believed that the observed changes in surface wettability behaviour is directly linked to the liquid temperature, pH value, surface roughness, along with the Hofmeister effect between the water and the surface in contact.


2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan

2007 ◽  
Vol 330-332 ◽  
pp. 877-880 ◽  
Author(s):  
E.S. Thian ◽  
J. Huang ◽  
Serena Best ◽  
Zoe H. Barber ◽  
William Bonfield

Crystalline hydroxyapatite (HA) and 0.8 wt.% silicon-substituted HA (SiHA) thin films were produced using magnetron co-sputtering. These films were subjected to contact angle measurements and in vitro cell culture study using human osteoblast-like (HOB) cells. A wettability study showed that SiHA has a lower contact angle, and thus is more hydrophilic in nature, as compared to HA. Consequently, enhanced cell growth was observed on SiHA at all time-points. Furthermore, distinct and well-developed actin filaments could be seen within HOB cells on SiHA. Thus, this work demonstrated that the surface properties of the coating may be modified by the substitution of Si into the HA structure.


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