Electron Beam Irradiation of Poly(Vinyl Methyl Ether) Films:  1. Synthesis and Film Topography

Langmuir ◽  
2005 ◽  
Vol 21 (13) ◽  
pp. 6073-6080 ◽  
Author(s):  
Jan Hegewald ◽  
Thomas Schmidt ◽  
Uwe Gohs ◽  
Margarita Günther ◽  
Rudolf Reichelt ◽  
...  
Keyword(s):  
Electron Beam ◽  
Methyl Ether ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Vinyl Methyl ◽  
Vinyl Methyl Ether

Electron Beam Irradiation of Poly(vinyl methyl ether) Films. 2. Temperature-Dependent Swelling Behavior

Langmuir ◽  
2006 ◽  
Vol 22 (11) ◽  
pp. 5152-5159 ◽  
Author(s):  
Jan Hegewald ◽  
Thomas Schmidt ◽  
Klaus-Jochen Eichhorn ◽  
Katja Kretschmer ◽  
Dirk Kuckling ◽  
...  
Keyword(s):  
Electron Beam ◽  
Methyl Ether ◽  
Electron Beam Irradiation ◽  
Swelling Behavior ◽  
Beam Irradiation ◽  
Vinyl Methyl ◽  
Temperature Dependent ◽  
Vinyl Methyl Ether

Pulsed electron beam irradiation of dilute aqueous poly(vinyl methyl ether) solutions

Polymer ◽  
2005 ◽  
Vol 46 (23) ◽  
pp. 9908-9918 ◽  
Author(s):  
Thomas Schmidt ◽  
Ireneusz Janik ◽  
Sławomir Kadłubowski ◽  
Piotr Ulański ◽  
Janusz M. Rosiak ◽  
...  
Keyword(s):  
Electron Beam ◽  
Methyl Ether ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Vinyl Methyl ◽  
Pulsed Electron Beam ◽  
Vinyl Methyl Ether

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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