Direct Electronic Property Imaging of a Nanocrystal-Based Photovoltaic Device by Electron Beam-Induced Current via Scanning Electron Microscopy

2014 ◽  
Vol 5 (5) ◽  
pp. 856-860 ◽  
Author(s):  
Amy Ng ◽  
Jonathan D. Poplawsky ◽  
Chen Li ◽  
Stephen J. Pennycook ◽  
Sandra J. Rosenthal
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electronic Property ◽  
Photovoltaic Device ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Scanning Electron

New Paradigm for EBIC Amplifier on FIB X-section

2019 ◽  
Author(s):  
Valerio Sanna Valle ◽  
Guy Perez ◽  
Guillaume Bascoul ◽  
Helene Chauvin ◽  
Benoît Viallet ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Induced Current ◽  
New Paradigm ◽  
Time Resolved ◽  
Imaging Mode ◽  
Electron Beam Induced Current ◽  
Sem Imaging ◽  
Scanning Electron

Abstract Electron Beam Induced Current is a powerful tool for Scanning Electron Microscopy (SEM) imaging mode. In this paper, the history and evolution of this technique are discussed. Some important defects are presented as well as their technological interpretation. A new custom amplifier is presented and its implementation in Time Resolved EBIC (TREBIC) is also proposed, the main differences with EBIC are pointed out.

The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA

1991 ◽  
Vol 224 ◽  
Author(s):  
Tian-Qun Zhou ◽  
Andrzej Buczkowski ◽  
Zbigniew Radzimski ◽  
George A. Rozgonyi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Near Surface ◽  
Transmission Electron ◽  
Electron Beam Induced Current ◽  
Metallic Impurities ◽  
Scanning Electron

AbstractA study of gettering and electrical activity of metallic impurities Ni, Au and Cu has been carried out on epitaxial Si/Si(2%Ge)/Si wafers containing interfacial misfit dislocations. The impurities were intentionally introduced from a backside deposited thin metal followed by rapid thermal annealing (RTA). Transmission Electron Microscopy (TEM) results indicate that the impurities were gettered along the misfit dislocations in near-surface regions either as Au precipitate colonies, or as NiSi2 and CuSi silicide precipitates. Data from Scanning Electron Microscopy (SEM) in the Electron Beam Induced Current (EBIC) mode revealed that these precipitates dominate the recombination properties of the initially inactive misfit dislocation.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Investigation of Die Tilting of Packages with Single and Multi-chips

2018 ◽  
Author(s):  
Lo Chea Wee ◽  
Tan Sze Yee ◽  
Gan Sue Yin ◽  
Goh Cin Sheng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Optical Microscopy ◽  
Device Performance ◽  
Electronic Components ◽  
Area Of Interest ◽  
On Chip ◽  
Scanning Electron

Abstract Advanced package technology often includes multi-chips in one package to accommodate the technology demand on size & functionality. Die tilting leads to poor device performance for all kinds of multi-chip packages such as chip by chip (CbC), chip on chip (CoC), and the package with both CbC and CoC. Traditional die tilting measured by optical microscopy and scanning electron microscopy has capability issue due to wave or electron beam blocking at area of interest by electronic components nearby. In this paper, the feasibility of using profilemeter to investigate die tilting in single and multi-chips is demonstrated. Our results validate that the profilemeter is the most profound metrology for die tilting analysis especially on multi-chip packages, and can achieve an accuracy of <2μm comparable to SEM.

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