The Complex Interaction of Spectroscopic Shifts and Electronic Properties in Semiconductor Nanocrystal Films

2013 ◽  
Vol 4 (4) ◽  
pp. 625-632 ◽  
Author(s):  
Edward E. Foos
Keyword(s):  
Electronic Properties ◽  
Complex Interaction ◽  
Semiconductor Nanocrystal ◽  
Nanocrystal Films

scholarly journals Intrinsic Optical and Electronic Properties from Quantitative Analysis of Plasmonic Semiconductor Nanocrystal Ensemble Optical Extinction

2020 ◽  
Vol 124 (44) ◽  
pp. 24351-24360
Author(s):  
Stephen L. Gibbs ◽  
Corey M. Staller ◽  
Ankit Agrawal ◽  
Robert W. Johns ◽  
Camila A. Saez Cabezas ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Electronic Properties ◽  
Optical Extinction ◽  
Semiconductor Nanocrystal ◽  
Optical And Electronic Properties

Size-Selected Subnanometer Cluster Catalysts on Semiconductor Nanocrystal Films for Atomic Scale Insight into Photocatalysis

Nano Letters ◽  
2012 ◽  
Vol 12 (11) ◽  
pp. 5903-5906 ◽  
Author(s):  
Maximilian J. Berr ◽  
Florian F. Schweinberger ◽  
Markus Döblinger ◽  
Kai E. Sanwald ◽  
Christian Wolff ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Semiconductor Nanocrystal ◽  
Nanocrystal Films ◽  
Insight Into

Electrochromic semiconductor nanocrystal films

2002 ◽  
Vol 80 (1) ◽  
pp. 4-6 ◽  
Author(s):  
Congjun Wang ◽  
Moonsub Shim ◽  
Philippe Guyot-Sionnest
Keyword(s):  
Semiconductor Nanocrystal ◽  
Nanocrystal Films

Intra- and inter-nanocrystal charge transport in nanocrystal films

Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 8042-8057 ◽  
Author(s):  
Willi Aigner ◽  
Oliver Bienek ◽  
Bruno P. Falcão ◽  
Safwan U. Ahmed ◽  
Hartmut Wiggers ◽  
...  
Keyword(s):  
Charge Transport ◽  
Semiconductor Nanocrystal ◽  
Nanocrystal Films ◽  
Optoelectronic Applications

The exploitation of semiconductor nanocrystal (NC) films in novel electronic and optoelectronic applications requires a better understanding of charge transport in these systems.

Spatial analysis of the photocurrent generation and transport in semiconductor nanocrystal films

2012 ◽  
Vol 86 (7) ◽  
Author(s):  
Stefan Kudera ◽  
Yang Zhang ◽  
Enzo Di Fabrizio ◽  
Liberato Manna ◽  
Roman Krahne
Keyword(s):  
Spatial Analysis ◽  
Semiconductor Nanocrystal ◽  
Photocurrent Generation ◽  
Nanocrystal Films

Electronic properties of doped silicon nanocrystal films

2008 ◽  
Vol 104 (5) ◽  
pp. 053701 ◽  
Author(s):  
Robert Lechner ◽  
Andre R. Stegner ◽  
Rui N. Pereira ◽  
Roland Dietmueller ◽  
Martin S. Brandt ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Silicon Nanocrystal ◽  
Doped Silicon ◽  
Nanocrystal Films

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Sign in / Sign up

Export Citation Format

Share Document