High Open Circuit Voltage Quantum Dot Sensitized Solar Cells Manufactured with ZnO Nanowire Arrays and Si/ZnO Branched Hierarchical Structures

2011 ◽  
Vol 2 (16) ◽  
pp. 1984-1990 ◽  
Author(s):  
P. Sudhagar ◽  
Taeseup Song ◽  
Dong Hyun Lee ◽  
Iván Mora-Seró ◽  
Juan Bisquert ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Open Circuit Voltage ◽  
Hierarchical Structures ◽  
Open Circuit ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Sensitized Solar Cells

Facile Conversion Synthesis of Densely-Formed Branched ZnO-Nanowire Arrays for Quantum-Dot-Sensitized Solar Cells

2015 ◽  
Vol 167 ◽  
pp. 194-200 ◽  
Author(s):  
Woojin Lee ◽  
Suji Kang ◽  
Taehyun Hwang ◽  
Kunsu Kim ◽  
Hyungsub Woo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Sensitized Solar Cells

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

Solution-derived 40 µm vertically aligned ZnO nanowire arrays as photoelectrodes in dye-sensitized solar cells

2010 ◽  
Vol 21 (19) ◽  
pp. 195602 ◽  
Author(s):  
Jijun Qiu ◽  
Xiaomin Li ◽  
Fuwei Zhuge ◽  
Xiaoyan Gan ◽  
Xiangdong Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Dye Sensitized ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned ◽  
Sensitized Solar Cells
Sign in / Sign up

Export Citation Format

Share Document