Optically Detected Magnetic Resonance Study of Electron/Hole Traps on CdSe Quantum Dot Surfaces

1998 ◽  
Vol 102 (46) ◽  
pp. 9245-9250 ◽  
Author(s):  
E. Lifshitz ◽  
I. Dag ◽  
I. D. Litvitn ◽  
G. Hodes
Keyword(s):  
Magnetic Resonance ◽  
Quantum Dot ◽  
Magnetic Resonance Study ◽  
Electron Hole ◽  
Cdse Quantum Dot ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance Study of CdS/HgS/CdS Quantum Dot Quantum Wells

1999 ◽  
Vol 103 (33) ◽  
pp. 6870-6875 ◽  
Author(s):  
E. Lifshitz ◽  
H. Porteanu ◽  
A. Glozman ◽  
H. Weller ◽  
M. Pflughoefft ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Quantum Dot ◽  
Quantum Wells ◽  
Magnetic Resonance Study ◽  
Cds Quantum Dot ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

ChemInform Abstract: Optically Detected Magnetic Resonance Study of CdS/HgS/CdS Quantum Dot Quantum Wells (QDQW).

ChemInform ◽  
2010 ◽  
Vol 30 (46) ◽  
pp. no-no
Author(s):  
E. Lifshitz ◽  
H. Porteanu ◽  
A. Glozman ◽  
H. Weller ◽  
M. Pflughoefft ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Quantum Dot ◽  
Quantum Wells ◽  
Magnetic Resonance Study ◽  
Cds Quantum Dot ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

Optically detected magnetic resonance study of SiC:Ti

1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes

2020 ◽  
Vol 1004 ◽  
pp. 343-348
Author(s):  
Yuichi Yamazaki ◽  
Yoji Chiba ◽  
Shin Ichiro Sato ◽  
Takahiro Makino ◽  
Naoto Yamada ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Magnetic Resonance ◽  
Three Dimensional ◽  
Magnetic Resonance Study ◽  
Mapping Analysis ◽  
Optically Detected Magnetic Resonance ◽  
Ion Proton ◽  
Pl Mapping ◽  
Optically Detected

We demonstrated optically detected magnetic resonance (ODMR) measurements using three-dimensional (3D) arrayed silicon vacancies (VSis) in in-plane SiC pn diodes. Proton beam writing successfully created 3D arrayed VSis using different ion (proton) energies. The results of PL mapping analysis indicate that the features of luminescent spot such as size and depth can be estimated by a Monte Carlo simulation (SRIM). This suggests that diagnosis at any locations in SiC devices can be realized using VSi quantum sensors. Luminescent spots with different depth ranging 4-60 μm showed similar ODMR spectra including its contrast, which means that a similar sensor sensitivity is expected. The results suggest that 3D arrayed VSi can act as quantum sensor elements with uniform sensitivity in SiC devices.

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