Deperturbation Analysis of the [18.5]1-X0+System and the Electronic Structure of ReN:  A Laser Induced and Dispersed Fluorescence Study

1997 ◽  
Vol 101 (36) ◽  
pp. 6741-6745 ◽  
Author(s):  
Jianying Cao ◽  
Walter J. Balfour ◽  
Charles X. W. Qian
Keyword(s):  
Electronic Structure ◽  
Fluorescence Study ◽  
Dispersed Fluorescence

Dynamics of linear and T-shaped Ar–I2 dissociation upon B←X optical excitation: A dispersed fluorescence study of the linear isomer

1999 ◽  
Vol 111 (17) ◽  
pp. 7844-7856 ◽  
Author(s):  
Amy E. Stevens Miller ◽  
Cheng-Chi Chuang ◽  
Henry C. Fu ◽  
Kelly J. Higgins ◽  
William Klemperer
Keyword(s):  
Optical Excitation ◽  
Fluorescence Study ◽  
Linear Isomer ◽  
Dispersed Fluorescence

Spectroscopy of van der Waals molecules: Isomers and vibrational predissociation

2001 ◽  
Vol 79 (2-3) ◽  
pp. 101-108 ◽  
Author(s):  
W Klemperer ◽  
C -C Chuang ◽  
K J Higgins ◽  
A Stevens Miller ◽  
H C Fu
Keyword(s):  
Ab Initio Calculation ◽  
Binding Energies ◽  
Inert Gas ◽  
Fluorescence Study ◽  
Linear Isomer ◽  
Vibrational Predissociation ◽  
Good Accord ◽  
Fluoride Complexes ◽  
Dispersed Fluorescence ◽  
State Dissociation

The inert-gas-halogen complexes have been studied for several decades by jet spectroscopy. Much of the seemingly bizarre behavior has become understandable in terms of two virtually isoenergetic isomer forms. The recently recognized linear isomer of Ar–I2 has a virtually continuous B ¬ X excitation spectrum. It also undergoes a very rapid vibrational predissociation, and suffers no electronic quenching from the B state. The well-known T-shaped isomer shows slow vibrational predissociation, which is competitive with electronic quenching. The quenching distorts the vibrational distribution of the I2 B state photofragments, consequently leading to a false estimation of the T-shaped Ar–I2 (B) state dissociation energy. The binding energies for the T-shaped Ar–I2 (X) and Ar–I2 (B) are unambiguously determined from the recent dispersed fluorescence study, which are also in good accord with the ab initio calculation. We discuss aspects of pure vibrational laser-induced fluorescence of hydrogen fluoride complexes. We contrast the behavior of Ar–HF with Ne–HF and present new results for the vHF = 3 level of Ne–HF. PACS Nos.: 33.80Gj, 34.30th

scholarly journals Insight into the Electronic Structure of the CP47 Antenna Protein Complex of Photosystem II: Hole Burning and Fluorescence Study†

2010 ◽  
Vol 132 (12) ◽  
pp. 4214-4229 ◽  
Author(s):  
Bhanu Neupane ◽  
Nhan C. Dang ◽  
Khem Acharya ◽  
Mike Reppert ◽  
Valter Zazubovich ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photosystem Ii ◽  
Protein Complex ◽  
Hole Burning ◽  
Fluorescence Study ◽  
Insight Into

The interacting B 4Σ− and d 2Π states of CrN: A laser induced and dispersed fluorescence study

1997 ◽  
Vol 107 (12) ◽  
pp. 4473-4482 ◽  
Author(s):  
Chi Zhou ◽  
Walter J. Balfour ◽  
Charles X. W. Qian
Keyword(s):  
Fluorescence Study ◽  
Dispersed Fluorescence

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

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