Spatially Resolved Spectral Inhomogeneities in Small Molecular Crystals Studied by Near-Field Scanning Optical Microscopy

1996 ◽  
Vol 100 (29) ◽  
pp. 11843-11849 ◽  
Author(s):  
David A. Vanden Bout ◽  
Josef Kerimo ◽  
Daniel A. Higgins ◽  
Paul F. Barbara
Keyword(s):  
Optical Microscopy ◽  
Near Field ◽  
Molecular Crystals ◽  
Spatially Resolved ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

The Uniformity of Surface Passivation After (NH4)2S Treatment Studied by Near-Field Scanning Optical Microscopy

1995 ◽  
Vol 405 ◽  
Author(s):  
Jutong Liu ◽  
T. F. Kuech
Keyword(s):  
Optical Microscopy ◽  
Surface Passivation ◽  
Near Field ◽  
Intensity Variation ◽  
State Density ◽  
Topographic Features ◽  
Spatially Resolved ◽  
Pl Intensity ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

AbstractWe have achieved spatially resolved room temperature photoluminescence (PL) from MOVPE GaAs (001) surfaces by Near-Field Scanning Optical Microscopy (NSOM). The PL intensity variation was related to the change of surface state density. Using this technique, the uniformity of surface passivation after (NH 4)2S treatment has been studied. We have performed the topography, reflection and PL measurements by NSOM as well as the topography measurements by Atomic Force Microscopy (AFM) on the as grown, etched and sulfur passivated GaAs samples. The uniformity of GaAs with a thin Al0 65Ga0.35As cap layer has also been studied and compared with the (NH 4)2S treatment. We found the sub-micron scale variations in PL intensity which were not correlated to the topographic features. Theoretical modeling has been used to obtain semi-quantitative analysis of the experimental results.

Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy

2001 ◽  
Vol 79 (7) ◽  
pp. 976-978 ◽  
Author(s):  
M. S. Jeong ◽  
J. Y. Kim ◽  
Y.-W. Kim ◽  
J. O. White ◽  
E.-K. Suh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Near Field ◽  
Spatially Resolved ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

The Uniformity Of Surface Passivation After (NH 4)2S Treatment Studied By Near-Field Scanning Optical Microscopy

1995 ◽  
Vol 406 ◽  
Author(s):  
Jutong Liu ◽  
T. F. Kuech
Keyword(s):  
Optical Microscopy ◽  
Surface Passivation ◽  
Near Field ◽  
Intensity Variation ◽  
State Density ◽  
Topographic Features ◽  
Spatially Resolved ◽  
Pl Intensity ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

AbstractWe have achieved spatially resolved room temperature photoluminescence (PL) from MOVPE GaAs (001) surfaces by Near-Field Scanning Optical Microscopy (NSOM). The PL intensity variation was related to the change of surface state density. Using this technique, the uniformity of surface passivation after (NH 4)2S treatment has been studied. We have performed the topography, reflection and PL measurements by NSOM as well as the topography measurements by Atomic Force Microscopy (AFM) on the as grown, etched and sulfur passivated GaAs samples. The uniformity of GaAs with a thin Al0.65Ga0.35As cap layer has also been studied and compared with the (NH 4)2S treatment. We found the sub-micron scale variations in PL intensity which were not correlated to the topographic features. Theoretical modeling has been used to obtain semi-quantitative analysis of the experimental results.

Raman imaging with near‐field scanning optical microscopy

1995 ◽  
Vol 67 (17) ◽  
pp. 2483-2485 ◽  
Author(s):  
C. L. Jahncke ◽  
M. A. Paesler ◽  
H. D. Hallen
Keyword(s):  
Optical Microscopy ◽  
Near Field ◽  
Raman Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Investigations of liquid crystals and liquid ambients using near-field scanning optical microscopy

1995 ◽  
Vol 61 (1-4) ◽  
pp. 291-294 ◽  
Author(s):  
Patrick J. Moyer ◽  
Stefan Kämmer ◽  
Karsten Walzer ◽  
Michael Hietschold
Keyword(s):  
Liquid Crystals ◽  
Optical Microscopy ◽  
Near Field ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning
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