Large Negative Differential Resistance in a Molecular Junction of Carbon Nanotube and Anthracene

2008 ◽  
Vol 112 (51) ◽  
pp. 16891-16894 ◽  
Author(s):  
Ying Xu ◽  
Gang Zhang ◽  
Baowen Li
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Junction

CHARGE TRANSPORT THROUGH CARBON NANOTUBE OR FULLERENE–MOLECULE–SILICON JUNCTIONS

NANO ◽  
2007 ◽  
Vol 02 (05) ◽  
pp. 285-294
Author(s):  
FU-REN F. FAN ◽  
BO CHEN ◽  
AUSTEN K. FLATT ◽  
JAMES M. TOUR ◽  
ALLEN J. BARD
Keyword(s):  
Carbon Nanotube ◽  
Charge Transport ◽  
Electron Acceptor ◽  
Negative Differential Resistance ◽  
Fullerene Molecule ◽  
Differential Resistance ◽  
Electron Donors ◽  
Switching Behavior ◽  
Current Voltage ◽  
Bistable Switching

We report here the current–voltage (i–V) characteristics of several (n++- Si /MNOPE/ C 60/ Pt -tip) or (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C 60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++- Si shows NDR behavior, whereas those of C 60- and SWCNT-derivatized GMMs of MNOPE on n++- Si show strong rectifying behavior with opposite rectification polarities. With C 60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C 60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions also show reversible bistable switching behavior.

Redox-Mediated Negative Differential Resistance Behavior from Metalloproteins Connected through Carbon Nanotube Nanogap Electrodes

2007 ◽  
Vol 129 (36) ◽  
pp. 11018-11019 ◽  
Author(s):  
Qun Tang ◽  
Hye Kyung Moon ◽  
Yoonmi Lee ◽  
Seok Min Yoon ◽  
Hyun Jae Song ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Nanogap Electrodes

Negative differential resistance in the unsymmetrical C121-based molecular junction

2011 ◽  
Vol 375 (27) ◽  
pp. 2639-2643 ◽  
Author(s):  
P. Zhao ◽  
D.S. Liu ◽  
Y. Zhang ◽  
Y. Su ◽  
S.J. Li ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Junction

THE INFLUENCE OF THE COUPLING STRENGTH ON THE ELECTRON TRANSPORT THROUGH THE BENZENE-1,4-DITHIOLATE MOLECULAR JUNCTION

2013 ◽  
Vol 27 (16) ◽  
pp. 1350121 ◽  
Author(s):  
YUNJIN YU ◽  
YAOYU LI ◽  
LANGHUI WAN ◽  
BIN WANG ◽  
YADONG WEI
Keyword(s):  
Electron Transport ◽  
Electronic Transport ◽  
Coupling Strength ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Resonant State ◽  
Differential Resistance ◽  
Stable Configuration ◽  
Molecular Junction ◽  
Aluminum Metal

The electronic transport properties of one benzene-1,4-dithiolate molecule coupled by two aluminum metal leads were investigated by using first-principles method. The influence of the coupling distance between the molecule and the electrodes on I–V curve was studied thoroughly. Our calculations showed that when the system is in the most stable configuration, where the system total energy is the lowest, and the electron transport is in off-resonant state. Starting from the most stable configuration, when we gradually increase the distance between the molecule and electrodes and so decreasing the coupling strength of the molecule and electrodes, the conductance, as well as the I–V curve, does not decrease immediately but increase quickly at first. Only when we separate the molecule and electrodes far enough, the current begins to drop quickly. The total scattering charge density was presented in order to understand this phenomenon. A one-level quantum dot model is used to explain it. Finally, negative differential resistance was observed and analyzed.

Gate Controlled Negative Differential Resistance and Photoconductivity Enhancement in Carbon Nanotube Addressable Intra-connects

2008 ◽  
Vol 1142 ◽  
Author(s):  
Seon Woo Lee ◽  
Slava Rotkin ◽  
Andrei Sirenko ◽  
Daniel Lopez ◽  
Avi Kornblit ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Chemical Vapor ◽  
Drain Current ◽  
Differential Resistance ◽  
Radial Breathing Mode ◽  
Light Illumination ◽  
Metal Electrodes ◽  
Current Voltage ◽  
P Type

ABSTRACTWe have observed gate-controlled N-shaped negative differential resistance (NDR) and photoconductivity enhancement in carbon nanotube (CNT) based addressable intra-connects. The intra-connects – bridges spanning across planar electrodes – were measured at room temperature. Individual single-walled CNT (SWCNT) channels were grown using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes without post-processing. The electrodes were made of cobalt. Methane and H2 gas mixture were introduced into quartz tube for an hour at 900 C, with flow rate of 1900 sccm for methane and 20 sccm for H2. We have investigated two different cases: in one case, the source-drain current-voltage, Ids-Vds, characteristics were linear. The other case exhibited nonlinear Ids-Vds characteristics. Raman scattering of the intra-connects indicated that each were made of SWCNT with radial breathing mode (RBM) at 191.9 cm-1 and 176.2 cm-1, respectively. Current-voltage Ids-Vds characteristics were measured for various Vgs from -10 V to +10 V. Negative differential resistance (NDR) was found in the Ids-Vgs curves for gate bias in the region of -3>Vgs>-6 V. The NDR peak was shifted to the negative side as the source-drain voltage was increased from Vds=0 to 0.75 V. Otherwise, the intra-connects exhibited characteristics of an ordinary p-type channel. The experiments were repeated under white light illumination. The light increases the carrier density in the channel but not in the metal electrodes and allowed us to study the effective doping of the channel without affecting the work function of the SWCNT/metal contact. The overall channel conductance increased under the light irradiation. Under illumination, the devices became more stable, as well. In summary, we have investigated contact properties between a SWCNT intra-connect and metal electrodes in a well controlled layout settings.

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