Electron Confinement Effects in the EPR Spectra of Colloidal n-Type ZnO Quantum Dots

2008 ◽  
Vol 112 (37) ◽  
pp. 14331-14335 ◽  
Author(s):  
Kelly M. Whitaker ◽  
Stefan T. Ochsenbein ◽  
Victor Z. Polinger ◽  
Daniel R. Gamelin
2010 ◽  
Vol 247 (6) ◽  
pp. 1476-1479 ◽  
Author(s):  
Pavel G. Baranov ◽  
Sergei B. Orlinskii ◽  
Detlev M. Hofmann ◽  
Celso de Mello Donegá ◽  
Andries Meijerink ◽  
...  

2009 ◽  
Vol 20 (42) ◽  
pp. 425701 ◽  
Author(s):  
D Haranath ◽  
Sonal Sahai ◽  
Amish G Joshi ◽  
Bipin K Gupta ◽  
V Shanker

2021 ◽  
Vol 22 (15) ◽  
pp. 8106
Author(s):  
Tianming Song ◽  
Yawei Qu ◽  
Zhe Ren ◽  
Shuang Yu ◽  
Mingjian Sun ◽  
...  

Despite the numerous available treatments for cancer, many patients succumb to side effects and reoccurrence. Zinc oxide (ZnO) quantum dots (QDs) are inexpensive inorganic nanomaterials with potential applications in photodynamic therapy. To verify the photoluminescence of ZnO QDs and determine their inhibitory effect on tumors, we synthesized and characterized ZnO QDs modified with polyvinylpyrrolidone. The photoluminescent properties and reactive oxygen species levels of these ZnO/PVP QDs were also measured. Finally, in vitro and in vivo experiments were performed to test their photodynamic therapeutic effects in SW480 cancer cells and female nude mice. Our results indicate that the ZnO QDs had good photoluminescence and exerted an obvious inhibitory effect on SW480 tumor cells. These findings illustrate the potential applications of ZnO QDs in the fields of photoluminescence and photodynamic therapy.


1998 ◽  
Vol 13 (10) ◽  
pp. 1154-1157 ◽  
Author(s):  
Kavita Borgohain ◽  
Shailaja Mahamuni

2011 ◽  
Vol 330 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Takahisa Omata ◽  
Atsushi Tazuke ◽  
Katsuhiro Nose ◽  
Shinya Otsuka-Yao-Matsuo

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.


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