In-Situ Surface Recombination Measurements of Oxygen Atoms on Anodized Aluminum in an Oxygen Plasma

2008 ◽  
Vol 112 (24) ◽  
pp. 8963-8968 ◽  
Author(s):  
Joydeep Guha ◽  
Peter Kurunczi ◽  
Luc Stafford ◽  
Vincent M. Donnelly ◽  
Yi-Kang Pu
Keyword(s):  
Oxygen Plasma ◽  
Surface Recombination ◽  
Anodized Aluminum ◽  
Oxygen Atoms

In Situ and Ex Situ Ellipsometric Characterization of Oxygen Plasma and UV Radiation Effects on Spacecraft Materials

1997 ◽  
Vol 502 ◽  
Author(s):  
C. L. Bungay ◽  
T. E. Tiwald ◽  
M. J. DeVries ◽  
B. J. Dworak ◽  
John A. Woollam
Keyword(s):  
Uv Radiation ◽  
Oxygen Plasma ◽  
Index Of Refraction ◽  
Uv Absorption ◽  
Ex Situ ◽  
Absorption Bands ◽  
Space Applications ◽  
Growth Trends ◽  
Ellipsometry Data

ABSTRACTAtomic Oxygen (AO) and ultraviolet (UV) radiation contribute (including synergistically) to degradation of spacecraft materials in Low Earth Orbit (LEO). NASA is, therefore, interested in determining what effects the harsh LEO environment has on materials exposed to it, as well as develop materials that are more AO and UV resistant. The present work involves the study of AO and UV effects on polyarylene ether benzimidazole (PAEBI) with in situ and ex situ spectroscopic ellipsometry. PAEBI is a polymer proposed for space applications due to its reported ability to form a protective phosphorous oxide on the surface when exposed to AO. In our experiments PAEBI was exposed to UV radiation from a xenon lamp while in situ ellipsometry data were acquired. The effects of UV radiation were modeled as an exponentially graded layer on the surface of bulk PAEBI. The change in UV absorption spectra, depth profile of the index of refraction, and growth trends of the UV irradiated PAEBI were all studied in these experiments. In addition, PAEBI was exposed to an oxygen plasma to simulate the synergistic effects of AO and UV. Ellipsometry data were acquired in-line with both a UV-Visible ellipsometer and an infrared ellipsometer. The change in UV absorption bands and index of refraction due to synergistic AO/UV, as well as the growth trends of the oxide layer were studied.

The Fabrication of Semiconductor Nanostructure Arrays on a Silicon Substrate Using an Anodized Aluminum Template

1996 ◽  
Vol 452 ◽  
Author(s):  
S. P. McGinnis ◽  
J. N. Cleary ◽  
B. Das
Keyword(s):  
Silicon Substrate ◽  
Semiconductor Nanostructures ◽  
In Situ Monitoring ◽  
Anodized Aluminum ◽  
Film Properties ◽  
Semiconductor Nanostructure ◽  
Periodic Arrays ◽  
Nanostructure Arrays ◽  
Silicon Based

AbstractWe have developed a nanogrowth technology for the fabrication of periodic arrays of semiconductor nanostructures on silicon that is currently being investigated for silicon based x-ray detectors. The semiconductor nanostructures are formed by chemical synthesis in pores of a template created by the anodization of aluminum on a silicon substrate. The use of the silicon substrate allows greater control over the aluminum thin film properties, better in situ monitoring of the pore formation process, and the direct integration of nanostructure arrays with conventional silicon technology.

scholarly journals CPP-GMR Performance of Electrochemically Synthesized Co/Cu Multilayered Nanowire Arrays with Extremely Large Aspect Ratio

Nanomaterials ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 5
Author(s):  
Himeyo Kamimura ◽  
Masamitsu Hayashida ◽  
Takeshi Ohgai
Keyword(s):  
Aspect Ratio ◽  
Giant Magnetoresistance ◽  
Spin Diffusion ◽  
Nanowire Arrays ◽  
Diffusion Limit ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Sputter Deposited ◽  
Multilayered Nanowires

Anodized aluminum oxide (AAO) films, which have numerous nanochannels ca. 75 nm in diameter, D and ca. 70 µm in length, L (ca. 933 in aspect ratio, L/D), were used as a template material for growing Co/Cu multilayered nanowire arrays. The multilayered nanowires with alternating Cu layer and Co layers were synthesized by using an electrochemical pulsed-potential deposition technique. The thickness of the Cu layer was adjusted from ca. 2 to 4 nm while that of the Co layer was regulated from ca. 13 to 51 nm by controlling the pulsed potential parameters. To get a Co/Cu multilayered nanowire in an electrochemical in-situ contact with a sputter-deposited Au thin layer, the pulsed potential deposition was continued up to ca. 5000 cycles until the nanowire reached out toward the surface of AAO template. Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect reached up to ca. 23.5% at room temperature in Co/Cu multilayered nanowires with ca. 3500 Co/Cu bilayers (Cu: 1.4 nm and Co: 18.8 nm). When decreasing the thickness of Co layer, the CPP-GMR value increased due to the Valet–Fert model in the long spin diffusion limit.

Oxidation and Induced Damage in Oxygen Plasma In Situ Wafer Bonding

2000 ◽  
Vol 147 (7) ◽  
pp. 2699 ◽  
Author(s):  
Donato Pasquariello ◽  
Christer Hedlund ◽  
Klas Hjort
Keyword(s):  
Wafer Bonding ◽  
Oxygen Plasma

In situ growth of nano-gold on anodized aluminum oxide with tandem nanozyme activities towards sensitive electrochemical nanochannel sensing

The Analyst ◽  
2020 ◽  
Vol 145 (20) ◽  
pp. 6617-6624 ◽  
Author(s):  
Xin Xia ◽  
Hui Li ◽  
Guoxing Zhou ◽  
Lei Ge ◽  
Feng Li
Keyword(s):  
Aluminum Oxide ◽  
In Situ Growth ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Nano Gold

The growth of nano-gold tandem nanozymes on anodized aluminum oxide is successfully developed using poly-dopamine as an in situ reducing layer for electrochemical nanochannel sensing.

scholarly journals Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3968
Author(s):  
Cho ◽  
Cha ◽  
Kim
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Surface Condition ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
Threshold Voltage Shift

The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen–plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen–plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD.

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