Liquid–Vapor Interface of Formic Acid Solutions in Salt Water: A Comparison of Macroscopic Surface Tension and Microscopic in Situ X-ray Photoelectron Spectroscopy Measurements

2014 ◽  
Vol 118 (50) ◽  
pp. 29350-29360 ◽  
Author(s):  
Jefferson G. Pruyne ◽  
Ming-Tao Lee ◽  
Csaba Fábri ◽  
Amaia Beloqui Redondo ◽  
Armin Kleibert ◽  
...  
Keyword(s):  
Surface Tension ◽  
Formic Acid ◽  
Photoelectron Spectroscopy ◽  
Salt Water ◽  
Acid Solutions ◽  
Vapor Interface ◽  
X Ray ◽  
Liquid Vapor

scholarly journals Succinic acid in aqueous solution: connecting microscopic surface composition and macroscopic surface tension

2014 ◽  
Vol 16 (39) ◽  
pp. 21486-21495 ◽  
Author(s):  
Josephina Werner ◽  
Jan Julin ◽  
Maryam Dalirian ◽  
Nønne L. Prisle ◽  
Gunnar Öhrwall ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Surface Tension ◽  
Succinic Acid ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Md Simulations ◽  
Vapor Interface ◽  
X Ray ◽  
Ph Values ◽  
Microscopic Surface

The water–vapor interface of aqueous solutions of succinic acid, where pH values and bulk concentrations were varied, has been studied using surface sensitive X-ray photoelectron spectroscopy (XPS) and molecular dynamics (MD) simulations.

scholarly journals In situ monitoring of the influence of water on DNA radiation damage by near-ambient pressure X-ray photoelectron spectroscopy

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Marc Benjamin Hahn ◽  
Paul M. Dietrich ◽  
Jörg Radnik
Keyword(s):  
Dna Damage ◽  
Radiation Damage ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
In Situ Monitoring ◽  
Strong Increase ◽  
Oh Radicals ◽  
Strand Breaks ◽  
X Ray

AbstractIonizing radiation damage to DNA plays a fundamental role in cancer therapy. X-ray photoelectron-spectroscopy (XPS) allows simultaneous irradiation and damage monitoring. Although water radiolysis is essential for radiation damage, all previous XPS studies were performed in vacuum. Here we present near-ambient-pressure XPS experiments to directly measure DNA damage under water atmosphere. They permit in-situ monitoring of the effects of radicals on fully hydrated double-stranded DNA. The results allow us to distinguish direct damage, by photons and secondary low-energy electrons (LEE), from damage by hydroxyl radicals or hydration induced modifications of damage pathways. The exposure of dry DNA to x-rays leads to strand-breaks at the sugar-phosphate backbone, while deoxyribose and nucleobases are less affected. In contrast, a strong increase of DNA damage is observed in water, where OH-radicals are produced. In consequence, base damage and base release become predominant, even though the number of strand-breaks increases further.

In situ Hard X-ray Photoelectron Spectroscopy on the Origin of Irreversibility in Electrochromic LixWO3 Thin Films

2021 ◽  
pp. 150898
Author(s):  
Makoto Takayanagi ◽  
Takashi Tsuchiya ◽  
Shigenori Ueda ◽  
Tohru Higuchi ◽  
Kazuya Terabe
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
X Ray

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

2016 ◽  
Vol 55 (8S2) ◽  
pp. 08PC02 ◽  
Author(s):  
Antonio T. Lucero ◽  
Young-Chul Byun ◽  
Xiaoye Qin ◽  
Lanxia Cheng ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Passivation Layer ◽  
X Ray ◽  
Interface Passivation
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