Enhancement of Donor–Acceptor Pair Emissions in Colloidal AgInS2 Quantum Dots with High Concentrations of Defects

2014 ◽  
Vol 118 (26) ◽  
pp. 14562-14568 ◽  
Author(s):  
Yasushi Hamanaka ◽  
Kohei Ozawa ◽  
Toshihiro Kuzuya
Keyword(s):  
Quantum Dots ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
High Concentrations

Radiative Recombination in Cadmium Sulfide

1972 ◽  
Vol 50 (13) ◽  
pp. 1518-1538 ◽  
Author(s):  
K. Colbow ◽  
K. Yuen
Keyword(s):  
Concentration Quenching ◽  
Conductivity Measurements ◽  
Edge Emission ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
High Concentrations ◽  
Luminescent Centers ◽  
Bound Electron

Luminescent centers involving Ag impurities were introduced into CdS single crystals through doping with 109Cd radioisotopes. Thus, the Ag concentration increases with time as more 109Cd decays. This enables a study of photoluminescence versus Ag concentration in a given crystal without changing the concentrations of other impurities.A new emission band at 5600 Å results in addition to the 6100 Å band present in Ag-doped crystals using conventional techniques. This new emission is quenched with increasing Ag concentration at high concentrations. Also concentration quenching by the Ag impurities occurs for the green edge, and the bound-exciton emissions I1, and I2. The quenching is explained by assuming a donor–acceptor recombination process.The new emission probably arises from the recombination of a bound electron with a bound hole at a distant donor–acceptor pair, with Ag as the acceptor. The acceptor role of Ag is supported by electrical conductivity measurements on 109Cd-doped crystals. Estimates are obtained for the acceptor binding energy, the donor concentrations, and the separations of pairs responsible for the new 5600 Å emission and the green-edge emission. The 6100 Å emission is attributed to Ag closely associated with other impurities. These conclusions are verified by our temperature annealing and quenching experiments.

Donor–Acceptor Pair Recombination in Size-Purified Silicon Quantum Dots

Nano Letters ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 7282-7288 ◽  
Author(s):  
Hiroshi Sugimoto ◽  
Masataka Yamamura ◽  
Riku Fujii ◽  
Minoru Fujii
Keyword(s):  
Quantum Dots ◽  
Acceptor Pair ◽  
Silicon Quantum Dots ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A FRET aptasensor for sensitive detection of aflatoxin B1 based on a novel donor-acceptor pair between ZnS quantum dots and Ag nanocubes

2020 ◽  
Author(s):  
Chengquan Wang ◽  
Wuhao Zhang ◽  
Jing Qian ◽  
Li Wang ◽  
Yi Ren ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Transfer ◽  
Fluorescence Resonance Energy Transfer ◽  
Aflatoxin B1 ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Sensitive Detection ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Aflatoxin B1 (AFB1) is one of the most carcinogenic chemicals. We proposed a novel fluorescence resonance energy transfer (FRET) sensor based on aptamer recognition technology for the sensitive detection of...

Thermal stability of photoluminescence in Cu-doped Zn–In–S quantum dots for light-emitting diodes

2016 ◽  
Vol 18 (16) ◽  
pp. 10976-10982 ◽  
Author(s):  
Xi Yuan ◽  
Ruixin Ma ◽  
Jie Hua ◽  
Yang Liu ◽  
Ji Li ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Quantum Dots ◽  
Conduction Band ◽  
Light Emitting Diodes ◽  
Acceptor Pair ◽  
Light Emitting ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Thermal Stability Of

Recombination between the donor–acceptor pair and/or between the host conduction band and the Cu ion state contributes to the emission of Cu:Zn–In–S QDs.

scholarly journals Origin of photoluminescence of water-soluble CuInS2 quantum dots prepared via a hydrothermal method

RSC Advances ◽  
2021 ◽  
Vol 11 (53) ◽  
pp. 33186-33191
Author(s):  
Kazutaka Iida ◽  
Yota Uehigashi ◽  
DaeGwi Kim
Keyword(s):  
Quantum Dots ◽  
Hydrothermal Method ◽  
Underlying Mechanism ◽  
Water Soluble ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Cuins2 Quantum Dots ◽  
Donor Acceptor Pair

The donor–acceptor pair emission is the underlying mechanism of the PL of the hydrothermally-synthesized water-soluble CIS QDs.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

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