Multiple Population-Period Transient Spectroscopy (MUPPETS) of CdSe/ZnS Nanoparticles. II. Effects of High Fluence and Solvent Heating

2013 ◽  
Vol 117 (49) ◽  
pp. 15272-15284 ◽  
Author(s):  
Haorui Wu ◽  
Kalyanasis Sahu ◽  
Mark A. Berg
Keyword(s):  
High Fluence ◽  
Zns Nanoparticles ◽  
Multiple Population ◽  
Transient Spectroscopy

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

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