Electrochemical Atomic Layer Deposition of CdS on Ag Single Crystals: Effects of Substrate Orientation on Film Structure

2014 ◽  
Vol 118 (12) ◽  
pp. 6132-6139 ◽  
Author(s):  
Francesco Carlà ◽  
Francesca Loglio ◽  
Andrea Resta ◽  
Roberto Felici ◽  
Elisa Lastraioli ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystals ◽  
Atomic Layer ◽  
Film Structure ◽  
Substrate Orientation ◽  
Layer Deposition

Control of thin film structure by reactant pressure in atomic layer deposition of TiO2

1996 ◽  
Vol 169 (3) ◽  
pp. 496-502 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Väino Sammelselg ◽  
Hele Siimon ◽  
Teet Uustare
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Structure ◽  
Thin Film Structure ◽  
Layer Deposition

scholarly journals Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 690
Author(s):  
Pao-Hsun Huang ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Wan-Yu Wu ◽  
Chien-Jung Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Optical Loss ◽  
Optical Emission ◽  
Hall Effect Measurement ◽  
Atomic Layer ◽  
Film Structure ◽  
Plasma Power ◽  
Layer Deposition ◽  
Sno2 Thin Films

In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (OV) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of OV ratio, while the plasma powers higher than 1500 W further cause the removal of OV and the significant bombardment from Ar*, leading to the increase of resistivity.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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