Controlled and Selective Area Growth of Monolayer Graphene on 4H-SiC Substrate by Electron-Beam-Assisted Rapid Heating

2013 ◽  
Vol 117 (37) ◽  
pp. 19195-19202 ◽  
Author(s):  
P. Dharmaraj ◽  
K. Jeganathan ◽  
V. Gokulakrishnan ◽  
P. Sundara Venkatesh ◽  
R. Parameshwari ◽  
...  
Keyword(s):  
Electron Beam ◽  
Rapid Heating ◽  
Monolayer Graphene ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

2014 ◽  
Vol 105 (18) ◽  
pp. 181601 ◽  
Author(s):  
P. Dharmaraj ◽  
K. Jeganathan ◽  
S. Parthiban ◽  
J. Y. Kwon ◽  
S. Gautam ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Epitaxial Graphene ◽  
Selective Area Growth ◽  
Beam Irradiation ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective-area growth of III-V nanowires and their applications

2011 ◽  
Vol 26 (17) ◽  
pp. 2127-2141 ◽  
Author(s):  
Katsuhiro Tomioka ◽  
Keitaro Ikejiri ◽  
Tomotaka Tanaka ◽  
Junichi Motohisa ◽  
Shinjiroh Hara ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
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