Drastic Change in Electrical Properties of Electrodeposited ZnO: Systematic Study by Hall Effect Measurements

2012 ◽  
Vol 116 (30) ◽  
pp. 15925-15931 ◽  
Author(s):  
Tsutomu Shinagawa ◽  
Masaya Chigane ◽  
Kuniaki Murase ◽  
Masanobu Izaki
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Systematic Study ◽  
Drastic Change ◽  
Hall Effect Measurements

Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

1987 ◽  
Vol 97 ◽  
Author(s):  
Gerhard Pensl ◽  
Reinhard Helbig ◽  
Hong Zhang ◽  
Gonther Ziegler ◽  
Peter Lanig
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Efficiency ◽  
Isothermal Annealing ◽  
Furnace Annealing ◽  
Hall Effect Measurements

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

Annealing of some II-IV-V2 crystals in the vapor of volatile constituents

2001 ◽  
Vol 692 ◽  
Author(s):  
Valeriy G. Voevodin ◽  
Olga V. Voevodina ◽  
Svetlana A. Bereznaya ◽  
Zoya V. Korotchenko ◽  
Nils C. Fernelius ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Chemical Analysis ◽  
Hall Effect ◽  
Gas Phase ◽  
Initial Imperfection ◽  
Structural Defects ◽  
Volatile Constituents ◽  
Hall Effect Measurements

AbstractExperiments on annealing of CdGeAs2-, CdSnAs2- and ZnGeP2-crystals in the vapor of volatile constituents were carried out. Conductivity and Hall effect measurements were performed to characterize the modification of electrical properties, caused by the interaction of the crystal with the gas phase during annealing. Literature data and the results of the present work are discussed based on the results of a quasi-chemical analysis. This yielded that the results of annealing depends essentially on both the conditions of the experiment and the initial imperfection of the crystal. The most probable native structural defects becoming apparent under the annealing were the following: for CdSnAs2 - SnCd, VAs; for CdGeAs2 - VAs, VCd, CdGe, GeCd; for CdSiAs2 - SiAs, VAs ; for CdSiP2 - VCd, VP; for ZnGeP2 - ZnGe, GeZn, VZn, VP; and for ZnSnP2- ZnSn, SnZn, VZn, VP.

Electrical properties of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5

2001 ◽  
Vol 680 ◽  
Author(s):  
M. Ahoujja ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
J. E. Van Nostrand
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Variable Temperature ◽  
Type Region ◽  
Si Doping ◽  
Gas Source ◽  
Hall Effect Measurements ◽  
Si Doped

ABSTRACTHall-effect measurements were conducted on Si-doped AlxGa1−xN films grown on sapphire substrate by gas source molecular beam epitaxy. The Al mole fraction in the 1 [.proportional]m thick AlxGa1−xN was 0.0, 0.3, and 0.5, and the Si doping concentration was kept at a nominal value of 1018 cm−3. Variable temperature Hall-effect measurements reveal a presence of a highly degenerate n-type region at the AlxGa1−xN /sapphire interface. This degenerate interfacial layer dominates the electrical properties below 30 K and significantly affects the properties of the AlxGa1−xN layer. Thus, by using a two-layer conducting model, the carrier concentration and mobility of the AlxGa1−xN layer alone are obtained.

scholarly journals Effect of Transition Metal Dopant on the Electrical Properties of ZnO-TiO2 Films Prepared by PLD Technique

2021 ◽  
Vol 19 (49) ◽  
pp. 75-81
Author(s):  
Hussein Jamal Abdul Karim ◽  
Ghuson H. Mohammed
Keyword(s):  
Electrical Properties ◽  
Transition Metal ◽  
Hall Effect ◽  
Transition Metal Oxides ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Mixed Oxides ◽  
Dc Conductivity ◽  
Tio2 Films ◽  
Hall Effect Measurements

In this article, the influence of group nano transition metal oxides such as {(MnO2), (Fe2O3) and (CuO)} thin films on the (ZnO-TiO2) electric characteristics have been analyzed. The prepared films deposited on glass substrate laser Nd-YAG with wavelength (ℷ =1064 nm) ,energy of (800mJ) and number of shots (400). The density of the film was found to be (200 nm) at room temperature (RT) and annealing temperature (573K).Using DC Conductivity and Hall Effect, we obtained the electrical properties of the films. The DC Conductivity shows that that the activation energies decrease while the σRT at annealing temperature with different elements increases the formation of mixed oxides. The Hall effect, the electrical properties of the films were described. It was observed through Hall Effect measurements that the films loaded vectors of the shape N and the type P.

Structural and Electrical Properties of Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si

1989 ◽  
Vol 161 ◽  
Author(s):  
S.M. Johnson ◽  
W.L. Ahlgren ◽  
M. H. Kalisher ◽  
J. B. James ◽  
W. J. Hamilton
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Lattice Mismatch ◽  
Biaxial Tension ◽  
Gaas Layer ◽  
X Ray ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Before And After ◽  
Hall Effect Measurements

ABSTRACTThe structural and electrical properties of heteroepitaxial HgCdTe/CdZnTe/GaAs/Si were evaluated using high-resolution x-ray diffraction techniques and Hall-effect measurements as a function of temperature. Significant tilting of the layers was found for both {100} and {111} CdZnTe layers grown on misoriented {100}GaAs/Si substrates, consistent with the interpretation of a low-angle tilt boundary being formed at the interface to relieve the large lattice mismatch between the layers. The GaAs layer is in a state of biaxial tension before and after the growth of the CdZnTe layers. The x-ray FWHM of HgCdTe layers grown by LPE on these substrates was found to be reduced from that of the MOCVD-grown CdZnTe buffer layer due to both an annealing effect during LPE growth and to the increased distance of layer surface from the defective CdZnTe/GaAs interface. Hall-effect mobility for {100}HgCdTe layers was nearly identical to that of layers grown on bulk CdZnTe substrates. High-quality heterojunction infrared detectors have been fabricated using these materials.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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