Structural and Electrical Properties of Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si

1989 ◽  
Vol 161 ◽  
Author(s):  
S.M. Johnson ◽  
W.L. Ahlgren ◽  
M. H. Kalisher ◽  
J. B. James ◽  
W. J. Hamilton
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Lattice Mismatch ◽  
Biaxial Tension ◽  
Gaas Layer ◽  
X Ray ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Before And After ◽  
Hall Effect Measurements

ABSTRACTThe structural and electrical properties of heteroepitaxial HgCdTe/CdZnTe/GaAs/Si were evaluated using high-resolution x-ray diffraction techniques and Hall-effect measurements as a function of temperature. Significant tilting of the layers was found for both {100} and {111} CdZnTe layers grown on misoriented {100}GaAs/Si substrates, consistent with the interpretation of a low-angle tilt boundary being formed at the interface to relieve the large lattice mismatch between the layers. The GaAs layer is in a state of biaxial tension before and after the growth of the CdZnTe layers. The x-ray FWHM of HgCdTe layers grown by LPE on these substrates was found to be reduced from that of the MOCVD-grown CdZnTe buffer layer due to both an annealing effect during LPE growth and to the increased distance of layer surface from the defective CdZnTe/GaAs interface. Hall-effect mobility for {100}HgCdTe layers was nearly identical to that of layers grown on bulk CdZnTe substrates. High-quality heterojunction infrared detectors have been fabricated using these materials.

Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

Pressure Ratio (PAs/PGa) Dependence on Low Temperature GaAs Buffer Layers Grown by MBE

1993 ◽  
Vol 325 ◽  
Author(s):  
M. Lagadas ◽  
Z. Hatzopoulos ◽  
M. Calamiotou ◽  
M. Kayiambaki ◽  
A. Christou
Keyword(s):  
Electrical Properties ◽  
Lattice Mismatch ◽  
Pressure Ratio ◽  
Electron Trap ◽  
Buffer Layers ◽  
High Crystalline Quality ◽  
Double Crystal ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Low Temperature Gaas

AbstractWe have investigated the influence of the pressure ratio (PAs4/PGa) on the structural and electrical properties of GaAs layers grown at 250°C by MBE. SEM photographs have revealed smooth surfaces for PAs4/PGa≥15 and Double crystal X-ray rocking curves have shown an increase on the lattice mismatch δaI/a of the L.T. grown layers and high crystalline quality. Resistivity has not been affected by the different values of PAs4/PGa. n-GaAs epilayers grown on top of L.T. buffer layers have their mobility decreased and the electron trap density increased as revealed by Hall and DLTS measurements.

MOCVD Growth of III-V Compounds on Si Using Strained Superlattices

1986 ◽  
Vol 67 ◽  
Author(s):  
Shiro Sakai ◽  
Tetsuo Soga ◽  
Masanari Takeyasu ◽  
Masayoshi Umeno
Keyword(s):  
Electronic Properties ◽  
Intermediate Layer ◽  
Lattice Mismatch ◽  
Gaas Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Mocvd Growth ◽  
Structural And Electronic Properties

ABSTRACTGaAs and GaAsP with the entire compositional range are grow on Si using an intermediate layer of GaAsP strained superlattices to relax the lattice mismatch. The orientation of the overgrown GaAs layer is found to be determined by the direction of the off-angle of the Si (100) surface. The grown layers are characterized by photoluminescence, x-ray diffraction, electro reflectance and DLTS. GaAs/GaAlAs double heterostructure lasers and GaAsP visible LED's are fabricated on Si substrates. The structural and electronic properties of the grown layers and the device performances are reported in this paper.

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Structural and electrical properties of Cu-doped Ni–Zn nanocrystalline ferrites for MLCI applications

2017 ◽  
Vol 31 (33) ◽  
pp. 1750318 ◽  
Author(s):  
D. Venkatesh ◽  
K. V. Ramesh
Keyword(s):  
Electrical Properties ◽  
Cation Distribution ◽  
Tetrahedral Site ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Phase Spinel ◽  
Diffraction Patterns

Polycrystalline Cu substituted Ni–Zn ferrites with chemical composition Ni[Formula: see text]Zn[Formula: see text]-Cu[Formula: see text]Fe2O4 (x = 0.00 to 0.25 in steps of 0.05) have been prepared by citrate gel autocombustion method. The samples for electrical properties have been sintered at 900[Formula: see text]C for 4 h. The X-ray diffraction patterns of all samples indicate the formation of single phase spinel cubic structure. The value of lattice parameter is decreases with increasing Cu concentration. The estimated cation distribution can be derived from X-ray diffraction intensity calculations and IR spectra. The tetrahedral and octahedral bond lengths, bond angles, cation–cation and cation–anion distances were calculated by using experimental lattice parameter and oxygen positional parameters. It is observed that Cu ions are distributed in octahedral site and subsequently Ni and Fe ions in tetrahedral site. The grain size of all samples has been calculated by Scanning Electron Microscopy (SEM) images. The variations in DC electrical resistivity and dielectric constant have been explained on the basis of proposed cation distribution.

The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers

1987 ◽  
Vol 92 ◽  
Author(s):  
El-Hang Lee ◽  
M.Abdul Awal ◽  
E. Y. Chan ◽  
R. L. Opila ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Treatment ◽  
Intermediate Layer ◽  
Optoelectronic Properties ◽  
Gaas On Si ◽  
Intermediate Layers ◽  
Structural And Electrical Properties ◽  
Before And After ◽  
Structural And Optoelectronic Properties ◽  
Raman Characterization

ABSTRACTCharacteristics of MOCVD GaAs grown on Si are compared before and after a rapid thermal treatment. The GaAs-on-Si samples were prepared both with and without a Ge intermediate layer, which is used to accomodate mismatches of lattice, thermal and chemical origin between GaAs and Si. Structural, interfacial, chemical, and electrical changes have been examined. RBS and Raman characterization showed improvement of GaAs crystallinity after RTA. In most cases, the interfaces were found to become sharper after RTA, but chemical interdiffusion was observed to cause some effect on the structural and electrical properties. For gold-contacted GaAs, RTA seems to degrade the electrical and optoelectronic properties via gold interdiffusion into GaAs. Comparative studies of the GaAs/Si and GaAs/Ge/Si samples suggests that the two respond somewhat differently to RTA.

Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

1987 ◽  
Vol 97 ◽  
Author(s):  
Gerhard Pensl ◽  
Reinhard Helbig ◽  
Hong Zhang ◽  
Gonther Ziegler ◽  
Peter Lanig
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Efficiency ◽  
Isothermal Annealing ◽  
Furnace Annealing ◽  
Hall Effect Measurements

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

An X-ray Diffraction Investigation of Tin Oxide Deposition and Annealing

2001 ◽  
Vol 666 ◽  
Author(s):  
Joshua J. Robbins ◽  
Yen-Jung Huang ◽  
Mailasu Bai ◽  
Tyrone Vincent ◽  
Colin A. Wolden
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Structural Changes ◽  
Chemical Vapor ◽  
Transparent Conductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxide Deposition ◽  
Hall Effect Measurements ◽  
Bombardment Energy

ABSTRACTTin oxide thin films were deposited by plasma-enhanced chemical vapor deposition (PECVD) for applications as a transparent conductor. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to quantify the crystal structure and morphology of these films both as-deposited and after annealing conditions. Annealing was performed in an argon environment as a function of time and temperature. Although annealing was found to significantly improve electrical properties, the structure as measured by XRD remained largely unchanged. Hall effect measurements show that the improvements in resistivity are due to increases in carrier concentration. XRD did reveal that films deposited on the powered electrode had a film orientation that was distinctly different than films deposited on the grounded electrode. These changes suggest the importance of ion bombardment energy. The structural changes were correlated with improved electrical properties.

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