Real-Time Probing of the Synthesis of Colloidal Silver Nanocubes with Time-Resolved High-Energy Synchrotron X-ray Diffraction

2012 ◽  
Vol 116 (21) ◽  
pp. 11842-11847 ◽  
Author(s):  
Sheng Peng ◽  
John S. Okasinski ◽  
Jonathan D. Almer ◽  
Yang Ren ◽  
Lin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
High Energy ◽  
Colloidal Silver ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Silver Nanocubes

X-ray diffraction cell for studying solid–gas reactions under gas pressures to 100 bar

2006 ◽  
Vol 39 (6) ◽  
pp. 850-855 ◽  
Author(s):  
E. MacA. Gray ◽  
D. J. Cookson ◽  
T. P. Blach
Keyword(s):  
Phase Transformation ◽  
Heat Flow ◽  
Real Time ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Time Determination ◽  
Gas Reactions ◽  
Gas Pressures

A pressure cell designed for high-energy X-ray diffraction in transmission mode is described. The cell is intended for use at temperatures up to 573 K with samples that are large enough to permit the real-time determination of the amount of absorbed gas by measuring the gas pressure. The design is driven by the need to ensure that the sample temperature is constant and uniform, despite the heat flow accompanying the reaction between the gas and the sample. The use of the cell is illustrated by its application to elucidating the hydriding phase transformation in the LaNi5–H2system.

Low Energy X-Ray Transmission Images by using a Microfocus X-Ray Tube and a be-Window X-Ray Image Intensifier(XRII)

1998 ◽  
Vol 4 (S2) ◽  
pp. 494-495
Author(s):  
H. Konuma ◽  
K. Kuroki ◽  
K. Kurosawa ◽  
N. Saitoh
Keyword(s):  
Real Time ◽  
Light Element ◽  
Image Intensifier ◽  
High Energy ◽  
Low Energy ◽  
Absorption Coefficients ◽  
Tube Voltage ◽  
Time Resolved ◽  
X Ray ◽  
Time Resolved Measurements

Photographs of x-ray transmission images by x-ray films have been used for observing the inside nondestructively. Further, Imaging Plates(IP) are used for precise measurements of x-ray diffraction patterns. But, these integrating area detectors are not suitable for real time nor time resolved measurements. For real time and time resolved measurements, the X-Ray Image Intensifier(XRII, a large image tube that converts an x-ray image into a visible image) is used for biological x-ray TV systems, x-ray nondestructive inspection systems etc. These TV x-ray image systems require high energy x-rays, x-ray tube voltage of 30 to 150 kV, and show faint contrast for x-ray images of light element substances owing to its low absorption coefficients. However, light elements have intense x-ray absorption coefficients in a low energy x-ray region, x-ray tube voltage of 5 to 20 kV, and give fine contrast for x-ray images of light element substances.

Overheating and Undercooling in Silicon During Pulsed-Laser Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
X Ray Diffraction ◽  
Laser Melting ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Krf Excimer Laser ◽  
Pulsed Laser Irradiation

ABSTRACTWe have used time-resolved x-ray diffraction measurements of thermal expansion induced strain to measure overheating and undercooling in <100> and <111> oriented silicon during pulsed laser melting and regrowth. 249 nm (KrF) excimer laser pulses of 1.2 J/cm2 energy density and 25 ns FWHM were synchronized with x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) to carry out Bragg profile measurements with ±2 ns time resolution. Combined overheating and undercooling values of 120 ± 30 K and 45 ± 20 K were found for the <111> and <100> orientations, respectively, and these values have been used to obtain information on the limiting regrowth velocities for silicon.

A time resolved high energy X-ray diffraction study of cooling liquid SiO2

2013 ◽  
Vol 15 (22) ◽  
pp. 8566 ◽  
Author(s):  
L. B. Skinner ◽  
C. J. Benmore ◽  
J. K. R. Weber ◽  
M. C. Wilding ◽  
S. K. Tumber ◽  
...  
Keyword(s):  
Diffraction Study ◽  
High Energy ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Cooling Liquid

The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction

2005 ◽  
Vol 108-109 ◽  
pp. 631-636 ◽  
Author(s):  
Matthias Stockmeier ◽  
Matthias Weisser ◽  
Rainer Hock ◽  
Andreas Magerl
Keyword(s):  
Activation Energy ◽  
Real Time ◽  
Oxygen Diffusion ◽  
High Energy ◽  
Temperature Evolution ◽  
X Ray Diffraction ◽  
Strain Fields ◽  
X Ray ◽  
Czochralski Silicon ◽  
Diffusion Limited

The build-up of strain fields caused by the precipitation of oxygen in Czochralski-silicon during annealing up to 1200°C and for process times up to 70 hours has been observed in real time by high energy x-ray diffraction. Five different processes are distinguished in the temperature evolution of the intensity and of the rocking width of the silicon 220-reflection. These features are attributed to different precipitation mechanisms. A fit to part of the data with a diffusion limited precipitation model leads to an activation energy for oxygen diffusion in silicon of 2.2 eV in the temperature range from 700°C to 950°C.

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