Self-Limiting Film Growth of Transparent Conducting In2O3 by Atomic Layer Deposition using Trimethylindium and Water Vapor

2011 ◽  
Vol 115 (31) ◽  
pp. 15384-15389 ◽  
Author(s):  
Do-Joong Lee ◽  
Jang-Yeon Kwon ◽  
Jae Il Lee ◽  
Ki-Bum Kim
Keyword(s):  
Water Vapor ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Transparent Conducting ◽  
Layer Deposition

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

scholarly journals Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

2017 ◽  
Vol 326 ◽  
pp. 281-290 ◽  
Author(s):  
Mari Napari ◽  
Manu Lahtinen ◽  
Alexey Veselov ◽  
Jaakko Julin ◽  
Erik Østreng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Zno Film ◽  
Temperature Plasma ◽  
Reactor Configuration ◽  
Layer Deposition

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

Selective Atomic Layer Deposition of Metals on Graphene for Transparent Conducting Electrode Application

2020 ◽  
Vol 12 (12) ◽  
pp. 14331-14340 ◽  
Author(s):  
Minsu Kim ◽  
Shunichi Nabeya ◽  
Seung-Min Han ◽  
Min-Sik Kim ◽  
Sangbong Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Transparent Conducting Electrode ◽  
Transparent Conducting ◽  
Conducting Electrode ◽  
Layer Deposition

Surface and subsurface film growth of titanium dioxide on polydimethylsiloxane by atomic layer deposition

2019 ◽  
Vol 493 ◽  
pp. 779-786 ◽  
Author(s):  
Sarah Hashemi Astaneh ◽  
Gregory Jursich ◽  
Cortino Sukotjo ◽  
Christos G. Takoudis
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Deposition
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