Effects of Adsorbed Moisture in SiO2 Substrates on the Formation of a Mn Oxide Layer by Chemical Vapor Deposition

2011 ◽  
Vol 115 (34) ◽  
pp. 16731-16736 ◽  
Author(s):  
Nguyen Mai Phuong ◽  
Koji Neishi ◽  
Yuji Sutou ◽  
Junichi Koike
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mn Oxide ◽  
Adsorbed Moisture

Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

2020 ◽  
Vol 1014 ◽  
pp. 144-148
Author(s):  
Ling Sang ◽  
Jing Hua Xia ◽  
Liang Tian ◽  
Fei Yang ◽  
Rui Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Oxidation Process ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Field Plate ◽  
Plate Length ◽  
Field Oxide

The effect of the field oxidation process on the electrical characteristics of 6500V 4H-SiC JBS diodes is studied. The oxide thickness and field plate length have an effect on the reverse breakdown voltage of the SiC JBS diode. According the simulation results, we choose the optimal thickness of the oxide layer and field plate length of the SiC JBS diode. Two different field oxide deposition processes, which are plasma enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD), are compared in our paper. When the reverse voltage is 6600V, the reverse leakage current of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 0.7 μA, which is 60% lower than that of PECVD process. When the forward current is 25 A, the forward voltage of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 3.75 V, which is 10% higher than that of PECVD process. There should be a trade-off between the forward and reverse characteristics in the actual high power and high temperature applications.

Formation of Nanocrystalline Si by Au-Catalyzed CH3SiH3 Pulse Jet CVD

2013 ◽  
Vol 750 ◽  
pp. 244-247
Author(s):  
Toshiaki Abe ◽  
Shouhei Anan ◽  
Fumiya Watanabe ◽  
Ryoji Takahashi ◽  
Yoshifumi Ikoma
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Pulse Jet ◽  
Nanocrystalline Si ◽  
Au Thin Film

Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition has been investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH3SiH3 pulse jets were irradiated onto the Au/SiO2/Si(100) surface. The irradiation of the CH3SiH3 jets at 1150 °C resulted in circular patterns with a diameter of ~40 µm on the sample surfaces. In the center of the circular patterns, agglomerations of Au were observed. It was found that the oxide layer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circular patterns. These results indicate that the nanocrystalline Si was grown by the VLS process in which Si atoms were supplied from the oxide layer, Si substrate, and CH3SiH3 molecules.

Chemical Vapor Deposition of MoS2 for Energy Harvesting: Evolution of the Interfacial Oxide Layer

2020 ◽  
Vol 3 (7) ◽  
pp. 6563-6573 ◽  
Author(s):  
Tim Verhagen ◽  
Alvaro Rodriguez ◽  
Martin Vondráček ◽  
Jan Honolka ◽  
Sebastian Funke ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Energy Harvesting ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor

Surface Cleaning Prior to Formation of Si/SiO2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

1992 ◽  
Vol 259 ◽  
Author(s):  
H. H. Lamb ◽  
S. Kalem ◽  
S. Bedge ◽  
T. Yasuda ◽  
Y. Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Cleaning ◽  
Ex Situ ◽  
Dangling Bond ◽  
Remote Plasma ◽  
Carbon Contamination

ABSTRACTEx situ UV/O2 cleaning prior to SiO2 deposition by RPECVD results in an SiO2/Si interface with mid-gap Dit values 2-5 times higher than interfaces formed by in situ exposure of HF-etched wafers to plasma-generated atomic O. In situ exposures to plasma-generated atomic H and atomic O are each effective at removing carbon contamination acquired by the UV/O2 cleaned wafers during transfer and introduction to the RPECVD chamber. However, in situ exposure of the photochemical oxide layer to atomic O results in higher mid-gap Dit values, and in situ exposure to atomic H results in creation of dangling bond defects (Pb centers).

Sign in / Sign up

Export Citation Format

Share Document