Hydrogen Storage in AB2 Laves Phase (A = Zr, Ti; B = Ni, Mn, Cr, V): Binding Energy and Electronic Structure

2010 ◽  
Vol 114 (39) ◽  
pp. 16832-16836 ◽  
Author(s):  
S. B. Gesari ◽  
M. E. Pronsato ◽  
A. Visintin ◽  
A. Juan
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Hydrogen Storage ◽  
Laves Phase

Blue Phosphorene Nanosheets with Point Defects: Electronic Structure and Hydrogen Storage Capability

2021 ◽  
pp. 149363
Author(s):  
Daughty John ◽  
Bijoy Nharangatt ◽  
Srihari Madhav Kastaur ◽  
Raghu Chatanathodi
Keyword(s):  
Electronic Structure ◽  
Hydrogen Storage ◽  
Point Defects ◽  
Blue Phosphorene

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

scholarly journals Local Pressure of Supercritical Adsorbed Hydrogen in Nanopores

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2235 ◽  
Author(s):  
Jimmy Romanos ◽  
Sara Abou Dargham ◽  
Roy Roukos ◽  
Peter Pfeifer
Keyword(s):  
Binding Energy ◽  
Hydrogen Storage ◽  
Lattice Gas ◽  
Adsorbed Hydrogen ◽  
Local Pressure ◽  
Average Binding Energy ◽  
Adsorbed Phase ◽  
Absolute Adsorption ◽  
Sorbent Materials ◽  
Low Coverage

An overview is given of the development of sorbent materials for hydrogen storage. Understanding the surface properties of the adsorbed film is crucial to optimize hydrogen storage capacities. In this work, the lattice gas model (Ono-Kondo) is used to determine the properties of the adsorbed hydrogen film from a single supercritical hydrogen isotherm at 77 K. In addition, this method does not require a conversion between gravimetric excess adsorption and absolute adsorption. The overall average binding energy of hydrogen is 4.4 kJ/mol and the binding energy at low coverage is 9.2 kJ/mol. The hydrogen film density at saturation is 0.10 g/mL corresponding to a local pressure of 1500 bar in the adsorbed phase.

scholarly journals Simulations of Defect-Interface Interactions in GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 287-293
Author(s):  
J. A. Chisholm ◽  
P. D. Bristowe
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Point Defects ◽  
Potential Model ◽  
Pair Potential ◽  
Planar Defects ◽  
Native Defects ◽  
Native Point Defects ◽  
Bulk Gan ◽  
Image Position

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.

POSSIBLE EVIDENCE FOR A VALENCE BAND SATELLITE IN PHOTOEMISSION SPECTRA FROM Sc(0001)

1994 ◽  
Vol 01 (04) ◽  
pp. 649-653 ◽  
Author(s):  
A.J. PATCHETT ◽  
S.S. DHESI ◽  
R.I.R. BLYTH ◽  
S.D. BARRETT
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Binding Energy ◽  
Single Crystals ◽  
Valence Band ◽  
Ground State ◽  
Rare Earth Metals ◽  
Final State ◽  
Bulk Single Crystals ◽  
The Creation

An intense photoemission feature is observed at a binding energy of ~10 eV in the UV photoemission spectra from the (0001) surfaces of bulk single crystals of rare-earth metals. This emission cannot be explained in terms of ground state electronic structure and we have been unable to attribute its existence to the presence of contamination of the surface. We present some evidence that may indicate its origin lies in the creation, by the photoemission process, of a metastable two-hole final state.

scholarly journals Publisher Correction: Hydrogen storage and stability properties of Pd–Pt solid-solution nanoparticles revealed via atomic and electronic structure

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Loku Singgappulige Rosantha Kumara ◽  
Osami Sakata ◽  
Hirokazu Kobayashi ◽  
Chulho Song ◽  
Shinji Kohara ◽  
...  
Keyword(s):  
Solid Solution ◽  
Electronic Structure ◽  
Hydrogen Storage ◽  
Stability Properties ◽  
Atomic And Electronic Structure
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