Photoinduced Ultrafast Dynamics of Coumarin 343 Sensitized p-Type-Nanostructured NiO Films

2005 ◽  
Vol 109 (41) ◽  
pp. 19403-19410 ◽  
Author(s):  
Ana Morandeira ◽  
Gerrit Boschloo ◽  
Anders Hagfeldt ◽  
Leif Hammarström
Keyword(s):  
Ultrafast Dynamics ◽  
P Type ◽  
Nio Films ◽  
Coumarin 343

Transparent nanoporous P-type NiO films grown directly on non-native substrates by anodization

2019 ◽  
Vol 30 (12) ◽  
pp. 11327-11335 ◽  
Author(s):  
Ryan Kisslinger ◽  
Saralyn Riddell ◽  
Spencer Savela ◽  
Piyush Kar ◽  
Ujwal K. Thakur ◽  
...  
Keyword(s):  
P Type ◽  
Nio Films

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Deposition of p-type NiO films by chemical spray pyrolysis

Vacuum ◽  
2014 ◽  
Vol 107 ◽  
pp. 242-246 ◽  
Author(s):  
M. Krunks ◽  
J. Soon ◽  
T. Unt ◽  
A. Mere ◽  
V. Mikli
Keyword(s):  
Spray Pyrolysis ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray ◽  
P Type ◽  
Nio Films

Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

2017 ◽  
Vol 67 ◽  
pp. 141-146 ◽  
Author(s):  
Liuan Li ◽  
Wenjing Wang ◽  
Liang He ◽  
Jialin Zhang ◽  
Zhisheng Wu ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
P Type ◽  
Nio Films

Preparation and Properties of P-Type Transparent Conductive NiO Films

2010 ◽  
Vol 123-125 ◽  
pp. 181-184 ◽  
Author(s):  
S.C. Chen ◽  
T.Y. Kuo ◽  
Y.C. Lin ◽  
C.L. Chang
Keyword(s):  
Electrical Resistivity ◽  
Glass Substrate ◽  
Composite Films ◽  
Cu Content ◽  
High Electrical Resistivity ◽  
Xrd Patterns ◽  
P Type ◽  
Cu Ions ◽  
Type Conduction ◽  
Nio Films

The NiO-Cu composite films with various Cu contents of 0 – 18.17 at.% are deposited on glass substrate. An ultra high electrical resistivity (ρ) is obtained and cannot be detected by four point probe measurement when the Cu contents in the films are lower than 6.97 at.%. The ρ value is reduced significantly to 35.8 Ω-cm as Cu content is increased to 9.18 at.%, and it further decreases to 0.02 Ω-cm when the Cu content further increases to 18.17 at.%. The Hall measurement for all Cu-doped NiO films show p-type conduction. In addition, the transmittance of NiO films also decreases continuously from 96 % to 43 % as Cu content increases from 0 to 18.17 at.%. The XRD patterns of Cu-doped NiO films only appear NiO peaks and the crystallinity of NiO films becomes worse as Cu content is added to above 6.97 at.%. Large amount of lattice sites of Ni2+ ions in NiO crystalline are replaced by the Cu+ ions that leads to p-type conduction and result in the degradation of crystallinity for NiO-Cu composite films having higher Cu content.

Simple and Reproducible Procedure to Prepare Self-Nanostructured NiO Films for the Fabrication of P-Type Dye-Sensitized Solar Cells

2009 ◽  
Vol 48 (17) ◽  
pp. 8245-8250 ◽  
Author(s):  
Loïc Lepleux ◽  
Benoit Chavillon ◽  
Yann Pellegrin ◽  
Errol Blart ◽  
Laurent Cario ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Dye Sensitized ◽  
P Type ◽  
Sensitized Solar Cells ◽  
Nio Films

Relation Between Electrical and Optical Properties of p-Type NiO Films

2018 ◽  
Vol 255 (4) ◽  
pp. 1700311 ◽  
Author(s):  
Mizuki Ono ◽  
Kohei Sasaki ◽  
Hiroki Nagai ◽  
Tomohiro Yamaguchi ◽  
Masataka Higashiwaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties ◽  
P Type ◽  
Nio Films

Fabrication of Visible-Light-Transparent Solar Cells Using p-Type NiO Films by Low Oxygen Fraction Reactive RF Sputtering Deposition

2013 ◽  
Vol 52 (2R) ◽  
pp. 021102 ◽  
Author(s):  
Moe Warasawa ◽  
Yousuke Watanabe ◽  
Jun Ishida ◽  
Yoshitsuna Murata ◽  
Shigefusa F. Chichibu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Visible Light ◽  
Rf Sputtering ◽  
Low Oxygen ◽  
Sputtering Deposition ◽  
Oxygen Fraction ◽  
P Type ◽  
Nio Films
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