Electron Transfer in a Flexible, Tethered Donor−Acceptor Pair:  The Influence of Solute Conformation on Solvent-Dependent Free Energies

2004 ◽  
Vol 108 (16) ◽  
pp. 3675-3687 ◽  
Author(s):  
John F. Kauffman ◽  
Mazdak Khajehpour ◽  
Na'il Saleh
Keyword(s):  
Electron Transfer ◽  
Free Energies ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Photoinduced Energy Transfer within a Donor Acceptor Pair and Subsequent Intermolecular Electron Transfer

1998 ◽  
Vol 1 (1) ◽  
pp. 399-405
Author(s):  
Ch. Königstein ◽  
A. Launikonis ◽  
A. W H. Mau ◽  
W. H. F. Sasse ◽  
G. J. Wilson
Keyword(s):  
Electron Transfer ◽  
Energy Transfer ◽  
Intermolecular Electron Transfer ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Photoinduced Energy Transfer within a Donor Acceptor Pair and Subsequent Intermolecular Electron Transfer

1999 ◽  
Vol 213 (Part_2) ◽  
pp. 199-205 ◽  
Author(s):  
Ch. Königstein ◽  
A. Launikonis ◽  
A. W. H. Mau ◽  
W. H. F. Sasse ◽  
G. J. Wilson
Keyword(s):  
Electron Transfer ◽  
Energy Transfer ◽  
Intermolecular Electron Transfer ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

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