Vacuum Ultraviolet Laser-Induced Fluorescence Detection of O(1S) Atom Produced in the 193 nm Photolysis of Ozone

2003 ◽  
Vol 107 (44) ◽  
pp. 9368-9373 ◽  
Author(s):  
Kenshi Takahashi ◽  
Tomoki Nakayama ◽  
Yutaka Matsumi
Keyword(s):  
Fluorescence Detection ◽  
Vacuum Ultraviolet ◽  
Laser Induced Fluorescence ◽  
Ultraviolet Laser ◽  
Laser Induced Fluorescence Detection ◽  
Vacuum Ultraviolet Laser ◽  
193 Nm

scholarly journals Photodissociation of Ozone at 248 nm and Vacuum Ultraviolet Laser-Induced Fluorescence Detection of O(1D)

1998 ◽  
Vol 17 (4) ◽  
pp. 191-203 ◽  
Author(s):  
A. M. Sarwaruddin Chowdhury
Keyword(s):  
Fluorescence Detection ◽  
Vacuum Ultraviolet ◽  
Laser Induced Fluorescence ◽  
Dye Laser ◽  
Probe Laser ◽  
Gas Cell ◽  
Ultraviolet Laser ◽  
Laser Induced Fluorescence Detection ◽  
Krf Laser ◽  
Vacuum Ultraviolet Laser

Ozone molecules, O3, were photodissociated in the presence of N2 at 248 nm (KrF laser) to O(1D)+ O2(1∆). The O(1D) atoms were detected by generating vacuum ultraviolet laser-induced fluorescence (VUV LIF) for the 3s1D0 -2p 1D transition at 115.2 nm. The 115.2 nm probe laser was generated by frequency tripling (ω vuv=3ω) of the 345.6 nm PTP dye laser in a Xe gas cell.

Photodissociation of 3-Bromo-1,1,1-trifluoro-2-propanol at 193 nm: Laser-Induced Fluorescence Detection of OH(ν′′ = 0,J′′)

2009 ◽  
Vol 113 (30) ◽  
pp. 8462-8470 ◽  
Author(s):  
Yogesh N. Indulkar ◽  
Hari P. Upadhyaya ◽  
Awadhesh Kumar ◽  
Suresh B. Waghmode ◽  
Prakash D. Naik
Keyword(s):  
Fluorescence Detection ◽  
Laser Induced Fluorescence ◽  
Laser Induced Fluorescence Detection ◽  
193 Nm

Vacuum Ultraviolet Laser Ablation of Teflon (PTFE)

1992 ◽  
Vol 285 ◽  
Author(s):  
Peter R. Herman ◽  
Boyi Chen ◽  
David J. Moore
Keyword(s):  
Experimental Data ◽  
Laser Ablation ◽  
Computer Model ◽  
Vacuum Ultraviolet ◽  
Ultraviolet Laser ◽  
Swelling Characteristics ◽  
Vacuum Ultraviolet Laser ◽  
193 Nm ◽  
Fluence Range

ABSTRACTVacuum-ultraviolet laser ablation of Teflon is reviewed. The 157 nm irradiation of Teflon produces clean ablation sites well suited to micromachining applications in the electronics and medical fields. At 193 nm, etching profiles are poorly defined, showing swelling characteristics commonly produced by longer wavelength lasers. Comprehensive new 193 nm ablation data are presented showing the first evidence of incubation effects for Teflon. A computer model was developed to include ablation, swelling and incubation processes. The computer results satisfactorily model the experimental data over a large fluence range of 0.6 to 13 J/cm2 with three adjustable parameters.

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