Probing the Electronic Structure of the Di-Iron Subsite of [Fe]-Hydrogenase:  A Photoelectron Spectroscopic Study of Fe(I)−Fe(I) Model Complexes

2003 ◽  
Vol 107 (23) ◽  
pp. 4612-4618 ◽  
Author(s):  
Xin Yang ◽  
Mathieu Razavet ◽  
Xue-Bin Wang ◽  
Christopher J. Pickett ◽  
Lai-Sheng Wang
2005 ◽  
Vol 72 (19) ◽  
Author(s):  
D. J. Aston ◽  
D. J. Payne ◽  
A. J. H. Green ◽  
R. G. Egdell ◽  
D. S. L. Law ◽  
...  

2020 ◽  
Vol 59 (31) ◽  
pp. 12965-12975 ◽  
Author(s):  
Rebeca G. Castillo ◽  
Justin T. Henthorn ◽  
Jeremy McGale ◽  
Dimitrios Maganas ◽  
Serena DeBeer

1990 ◽  
Vol 209 ◽  
Author(s):  
Shu Jin ◽  
Lothar Ley

ABSTRACTTotal yield photoelectron spectroscopy has been used to study the electronic structure change of UHV evaporated a-Ge subjected to posthydrogenation and various annealing cycles. We identify in R.T. hydrogenated a-Ge:H a new hydrogen induced defect at about Ev + 0.45eV, which can be healed upon 300°C annealing. This new defect accounts for the defect density gradient of hydrogenated amorphous semiconductors, spanning the range from ∼ 1018 cm−3 at the growing surface to 1018−1015 cm−3 in the bulk, depending on growth condition and time. The origin of this new defect is discussed.


2010 ◽  
Vol 7 (6) ◽  
pp. 1574-1576 ◽  
Author(s):  
Masao Kamada ◽  
Harue Sugiyama ◽  
Kazutoshi Takahashi ◽  
Qixin Guo ◽  
Jiajun Gu ◽  
...  

2008 ◽  
Vol 162 (2) ◽  
pp. 67-73 ◽  
Author(s):  
Xiaobo Chen ◽  
Per-Anders Glans ◽  
Xiaofeng Qiu ◽  
Smita Dayal ◽  
Wayne D. Jennings ◽  
...  

1998 ◽  
Vol 290 (4-6) ◽  
pp. 405-408 ◽  
Author(s):  
Xiaoyan Cao ◽  
Chunhua Qiao ◽  
Dianxun Wang

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