Epitaxial Electrodeposition of a Crystalline Metal Oxide onto Single-Crystalline Silicon

2002 ◽  
Vol 106 (48) ◽  
pp. 12369-12372 ◽  
Author(s):  
Jay A. Switzer ◽  
Run Liu ◽  
Eric W. Bohannan ◽  
Frank Ernst
2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.


2014 ◽  
Vol 126 (42) ◽  
pp. 11565-11565
Author(s):  
Ryo Tsunashima ◽  
Yoshifumi Iwamoto ◽  
Yusuke Baba ◽  
Chisato Kato ◽  
Katsuya Ichihashi ◽  
...  

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