scholarly journals Effect of Base Sequence and Hydration on the Electronic and Hole Transport Properties of Duplex DNA:  Theory and Experiment†

2003 ◽  
Vol 107 (18) ◽  
pp. 3525-3537 ◽  
Author(s):  
Robert N. Barnett ◽  
Charles L. Cleveland ◽  
Uzi Landman ◽  
Edna Boone ◽  
Sriram Kanvah ◽  
...  
Keyword(s):  
Transport Properties ◽  
Hole Transport ◽  
Base Sequence ◽  
Duplex Dna ◽  
Theory And Experiment

scholarly journals The impact of molecular weight, air exposure and molecular doping on the charge transport properties and electronic defects in dithienyl-diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymers

2016 ◽  
Vol 4 (46) ◽  
pp. 10827-10838 ◽  
Author(s):  
Riccardo Di Pietro ◽  
Tim Erdmann ◽  
Naixiang Wang ◽  
Xuhai Liu ◽  
David Gräfe ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Charge Transport ◽  
Transport Properties ◽  
Hole Transport ◽  
Trap States ◽  
Air Exposure ◽  
Molecular Doping ◽  
Electronic Defects ◽  
The Impact

Optimization of hole transport via passivation of trap states.

scholarly journals Exploring the temperature effect on hole transport properties in organic bulk heterojunctions

RSC Advances ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 3157-3161
Author(s):  
Bixin Li ◽  
Shiyang Zhang ◽  
Xianglin Li
Keyword(s):  
Temperature Effect ◽  
Transport Properties ◽  
Mobility Model ◽  
Hole Transport ◽  
Bulk Heterojunctions ◽  
Trapping Model ◽  
Increasing Temperature

The hole transport in organic bulk heterojunctions shows a transition from a mobility model to a trapping model with increasing temperature.

Effects of carbon chain on hole-transport properties in naphtho[2,1-b:6,5-b′]difuran derivatives: Remarkable anisotropic mobilities

2014 ◽  
Vol 15 (11) ◽  
pp. 3341-3348 ◽  
Author(s):  
Xiao-Yu Zhang ◽  
Guang-Jiu Zhao ◽  
Jin-Dou Huang ◽  
Wei-Ping Zhang
Keyword(s):  
Transport Properties ◽  
Carbon Chain ◽  
Hole Transport

Temperature dependence of hole transport properties through physically defined silicon quantum dots

2020 ◽  
Vol 117 (9) ◽  
pp. 094001
Author(s):  
N. Shimatani ◽  
Y. Yamaoka ◽  
R. Ishihara ◽  
A. Andreev ◽  
D. A. Williams ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Hole Transport ◽  
Silicon Quantum Dots

Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films

2015 ◽  
Vol 4 (3) ◽  
pp. Q26-Q30 ◽  
Author(s):  
Min Liao ◽  
Zewen Xiao ◽  
Fan-Yong Ran ◽  
Hideya Kumomi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Thin Film Transistor ◽  
Hole Transport ◽  
Pb Doping

Hole transport properties of self-organized oligosilane films in a polycrystalline and a mesophase

2001 ◽  
Vol 121 (1-3) ◽  
pp. 1507-1508 ◽  
Author(s):  
H. Okumoto ◽  
T. Yatabe ◽  
J. Peng ◽  
A. Kaito ◽  
N. Minami
Keyword(s):  
Transport Properties ◽  
Hole Transport ◽  
Self Organized

Hole Transport in Self-Organized Oligosilane Thin Films with Highly Ordered Hopping Sites

2001 ◽  
Vol 707 ◽  
Author(s):  
H. Okumoto ◽  
T. Yatabe ◽  
A. Richter ◽  
M. Shimomura ◽  
A. Kaito ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Hole Mobility ◽  
Multilayered Structure ◽  
Hole Transport ◽  
Conjugated Molecules ◽  
Disordered Structures ◽  
Self Organized ◽  
Carrier Transport Properties

ABSTRACTSelf-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of σ-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhe-nius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm-2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

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