Thermal Dissociation of Condensed Complexes of Cholesterol and Phospholipid

2002 ◽  
Vol 106 (18) ◽  
pp. 4755-4762 ◽  
Author(s):  
Arun Radhakrishnan ◽  
Harden M. McConnell
1980 ◽  
Vol 20 (7) ◽  
pp. 471-474 ◽  
Author(s):  
M. Vidal-Leiria ◽  
N. Van Uden
Keyword(s):  

1994 ◽  
Vol 235 (1) ◽  
pp. 105-116 ◽  
Author(s):  
Ning Zhang ◽  
Jing-Hua Li ◽  
Qing-Tang Cheng ◽  
Ming-Wei Zhu

1931 ◽  
Vol 53 (5) ◽  
pp. 1681-1689 ◽  
Author(s):  
Charles B. Hurd ◽  
Kenneth E. Walker

2009 ◽  
Vol 27 (2) ◽  
pp. 105-131 ◽  
Author(s):  
Mohamed Iqbal Pallipurath

Thermal dissociation of hydrated sediment by a pumped hot fluid is modeled. A radial heat flow from the hot pipe is assumed. The coordinate system is cylindrical. Three components (hydrate, methane and water) and three phases (hydrate, gas, and aqueous-phase) are considered in the simulator. The intrinsic kinetics of hydrate formation or dissociation is considered using the Kim-Bishnoi model. Mass transport, including two-phase flow, molecular diffusions and heat transfer involved in formation or dissociation of hydrates are included in the governing equations, which are discretized with finite volume difference method and are solved in an explicit manner. The strength deterioration of the hydrate bed as a result of dissociation is investigated with a geo-mechanical model. The way in which dissociation affects the bed strength is determined by plugging in the porosity and saturation change as a result of dissociation into the sediment collapse equations. A mechanism to measure the pore pressure changes occurring due to dissociation is developed. The rate of collapse as dissociation proceeds is determined and the model thus enables the definition of a safety envelope for gas hydrate drilling.


2006 ◽  
Vol 32 (2) ◽  
pp. 234-237
Author(s):  
L. B. Vedmid’ ◽  
V. F. Balakirev ◽  
A. M. Yankin ◽  
Yu. V. Golikov

1964 ◽  
Vol 40 (9) ◽  
pp. 2639-2652 ◽  
Author(s):  
George E. Moore ◽  
F. C. Unterwald
Keyword(s):  

1971 ◽  
Vol 49 (12) ◽  
pp. 2175-2178 ◽  
Author(s):  
H. Jakubinek ◽  
S. C. Srinivasan ◽  
D. R. Wiles

HMn(CO)5, DMn(CO)5, CH3Mn(CO)5, and C6H5Mn(CO)5 have been irradiated with neutrons and the product spectrum of 56Mn-containing molecules determined. The results show that H56Mn(CO)5 is formed in all cases: 21.0%, 23.6% from HMn(CO)5 and DMn(CO)5 targets, respectively, and 6.9% and 2.1% from CH3Mn(CO)5 and C6H5Mn(CO)5, respectively. Thus the yields are not in accord with the number of H atoms per target molecule. Preliminary experiments show that •*Mn(CO)5 exchanges rapidly with HMn(CO)5 and DMn(CO)5 and very slowly with CH3Mn(CO)5 and C6H5Mn(CO)5. It is deduced that the very high yield of H56Mn(CO)5 in HMn(CO)5 and DMn(CO)5 targets could arise from the rapid exchange, while the lower yields of H56Mn(CO)5 in other targets must likely come from radical reactions following thermal dissociation of the target molecule.


1995 ◽  
Vol 398 ◽  
Author(s):  
P. Santos-Filho ◽  
G. Stevens ◽  
Z. Lu ◽  
K. Koh ◽  
G. Lucovsky

ABSTRACTWe address aspects of hydrogen bonding and its thermal evolution in amorphous Silicon nitride films grown by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) from SiH4 and NH3 (or ND3) source gases. Rapid Thermal Annealing (RTA) decreases the Si-H(D) and SiN-H(D) bond populations. The hydrogen bonds break, and H2 (HD, D2) forms and evolves from the film with the heat treatment. This molecular hydrogen release is accompanied by Si- and N- bond healing as detected by a SiN infra red stretch mode signal gain. The ex-situ RTA experiment temperatures ranged from 400 °C to 1200 °C, in 100 °C steps and the film structural changes were monitored by Fourier Transform Infrared spectroscopy (FTIR) after each incremental anneal. Gas flow ratios R=NH3/SiH4 > 2 produced films in which SiN-H(D) bonds dissociated, and a gas desorption rate equation estimated an activation energy barrier of Ea = 0.3 eV. The release of hydrogen from the films in the form of H2 (D2) and ammonia radicals was detected by mass spectrometry and is shown here. The re-bonding of nitrogen to silicon upon thermal dissociation of hydrogen's is consistent with the improvement of the electrical properties of a-SiN:H films following RTA treatment.


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