Formation of Amorphous Silicon by the Low-Temperature Tunneling Reaction of H Atoms with Solid Thin Film of SiH4at 10 K

2001 ◽  
Vol 105 (29) ◽  
pp. 6950-6955 ◽  
Author(s):  
Kenzo Hiraoka ◽  
Tetsuya Sato ◽  
Shoji Sato ◽  
Shigeomi Hishiki ◽  
Katsunori Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Amorphous Silicon

scholarly journals Amorphous silicon thin film solar cells deposited entirely by hot-wire chemical vapour deposition at low temperature (<150 °C)

2009 ◽  
Vol 517 (12) ◽  
pp. 3575-3577 ◽  
Author(s):  
Fernando Villar ◽  
Aldrin Antony ◽  
Jordi Escarré ◽  
Daniel Ibarz ◽  
Rubén Roldán ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Thin Film Solar Cells ◽  
Hot Wire ◽  
Silicon Thin Film

Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates

1998 ◽  
Vol 508 ◽  
Author(s):  
Gregory N. Parsons ◽  
Chien-Sheng Yang ◽  
Tonya M. Klein ◽  
Laura Smith
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Charge Trapping ◽  
Rf Plasma ◽  
Processing Temperature ◽  
Silicon Thin Film ◽  
Transparent Plastic ◽  
Plastic Substrates

AbstractThis article presents mechanisms for low temperature (<150°C) rf plasma enhanced chemical vapor deposition of silicon and silicon nitride thin films that lead to sufficient electronic quality for thin film transistor (TFT) fabrication and operation. For silicon deposition, hydrogen abstraction and etching, and silicon disproportionation reactions are identified that can lead to optimized hydrogen concentration and bonding environments at <150°C. Nitrogen dilution of SiH4/NH3 mixtures during silicon nitride deposition at low temperatures helps promote N-H bonding, leading to reduced charge trapping. Good quality amorphous silicon TFT's fabricated with a maximum processing temperature of 110 °C are demonstrated on flexible transparent plastic substrates. Transistors formed with the same process on glass and plastic show linear mobilities of 0.33 and 0.12 cm2/Vs, respectively, with ION/IOFF ratios > 106.

Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin Film Transistors on Transparent Plastic Substrates

1998 ◽  
Vol 507 ◽  
Author(s):  
Gregory N. Parsons ◽  
Chien-Sheng Yang ◽  
Tonya M. Klein ◽  
Laura Smith
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Charge Trapping ◽  
Rf Plasma ◽  
Processing Temperature ◽  
Silicon Thin Film ◽  
Transparent Plastic ◽  
Plastic Substrates

ABSTRACTThis article presents mechanisms for low temperature (<150°C) rf plasma enhanced chemical vapor deposition of silicon and silicon nitride thin films that lead to sufficient electronic quality for thin film transistor (TFT) fabrication and operation. For silicon deposition, hydrogen abstraction and etching, and silicon disproportionation reactions are identified that can lead to optimized hydrogen concentration and bonding environments at <150°C. Nitrogen dilution of SiH4/NH3 mixtures during silicon nitride deposition at low temperatures helps promote N-H bonding, leading to reduced charge trapping. Good quality amorphous silicon TFT's fabricated with a maximum processing temperature of 110°C are demonstrated on flexible transparent plastic substrates. Transistors formed with the same process on glass and plastic show linear mobilities of 0.33 and 0.12 cm2/Vs, respectively, with ION/IOFF ratios > 106.

Low-temperature crystallisation of amorphous-silicon films for the fabrication of thin-film transistors

1989 ◽  
Vol 36 (1-4) ◽  
pp. 247-256 ◽  
Author(s):  
O.S. Panwar ◽  
R.A. Moore ◽  
N.S.J. Mitchell ◽  
H.S. Gamble ◽  
B.M. Armstrong
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Films

scholarly journals Low-Temperature Passivation of Amorphous-Silicon Thin-Film Transistors With Supercritical Fluids

2007 ◽  
Vol 28 (7) ◽  
pp. 584-586 ◽  
Author(s):  
Chih-Tsung Tsai ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
Chen-Wen Wang ◽  
Po-Yu Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Supercritical Fluids ◽  
Thin Film Transistors ◽  
Silicon Thin Film
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