Second Harmonic Generation at Chemically Modified Si(111) Surfaces†

2000 ◽  
Vol 104 (32) ◽  
pp. 7668-7676 ◽  
Author(s):  
S. A. Mitchell ◽  
R. Boukherroub ◽  
S. Anderson
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Chemically Modified

Chemical Modification of Surface Steps on SI(111) Vicinal Wafers: a Bonding Model for Phase Changes in Second Harmonic Generation

1993 ◽  
Vol 318 ◽  
Author(s):  
Z. Jing ◽  
G. Lucovsky ◽  
J. L. Whitten
Keyword(s):  
Second Harmonic Generation ◽  
Chemical Modification ◽  
Harmonic Generation ◽  
Anharmonic Oscillator ◽  
Second Harmonic ◽  
Incident Radiation ◽  
Phase Changes ◽  
Chemically Modified ◽  
Native Oxides ◽  
Surface Steps

ABSTRACTThere have been several studies of second harmonic generation (SHG) from chemically-modified vicinal Si(111) wafers. The SH fields contain one-fold (ψ) and three-fold (3ψ) symmetry contributions, which originate respectively from the terrace and surface step atoms. The phase of these contributions are different for native oxides, and are a function of the frequency of the incident radiation, ω. To identify the origin of these different phases for the terrace and step SH fields, we use a classical anharmonic oscillator model based on two assumptions: (a) a significant fraction of Si atoms at the steps have dangling bonds when oxides are formed below ∼850°C, and (b) these step atoms are linked to atoms at the bottom of the steps by O-Si-O groups following annealing at >900°C.

Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers

1992 ◽  
Vol 281 ◽  
Author(s):  
U. Emmerichs ◽  
C. Meyer ◽  
K. Leo ◽  
H. Kurz ◽  
C. H. Bjorkman ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Surface Structure ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Rotational Symmetry ◽  
Vicinal Surfaces ◽  
Axis Orientation ◽  
Chemically Modified

ABSTRACTUsing surface second harmonic generation (SSHG) at 1053nm, we study the influence of off-axis orientation and surface structure of silicon (111) surfaces. We study wafers cut at angles between 0° and 5° in the [112] direction. The surface structure is varied by thermal oxidation at 850°C, annealing, and thinning the oxide in a HF solution. For comparison, nitride films are also investigated. The characteristic rotational symmetry of the SSHG-signal for (111) flat (non-vicinal) surfaces is enhanced by a Si/SiO2 interface. The oxide layer also influences the signals due to the steps on vicinal surfaces. The results are discussed in comparison with a microscopic model of the oxidized misoriented surface.

Second-harmonic generation from chemically modified Ge(111) interfaces

2002 ◽  
Vol 116 (15) ◽  
pp. 6745-6754 ◽  
Author(s):  
Vasiliy Fomenko ◽  
Dora Bodlaki ◽  
Catherine Faler ◽  
Eric Borguet
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Chemically Modified

Test of directional photoionisation models of second harmonic generation in optical fibres

1992 ◽  
Vol 139 (2) ◽  
pp. 133 ◽  
Author(s):  
N.M. Lawandy ◽  
T.J. Driscoll ◽  
C.L. Adler ◽  
N.M. Lawandy
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Optical Fibres
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