Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers

1992 ◽  
Vol 281 ◽  
Author(s):  
U. Emmerichs ◽  
C. Meyer ◽  
K. Leo ◽  
H. Kurz ◽  
C. H. Bjorkman ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Surface Structure ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Rotational Symmetry ◽  
Vicinal Surfaces ◽  
Axis Orientation ◽  
Chemically Modified

ABSTRACTUsing surface second harmonic generation (SSHG) at 1053nm, we study the influence of off-axis orientation and surface structure of silicon (111) surfaces. We study wafers cut at angles between 0° and 5° in the [112] direction. The surface structure is varied by thermal oxidation at 850°C, annealing, and thinning the oxide in a HF solution. For comparison, nitride films are also investigated. The characteristic rotational symmetry of the SSHG-signal for (111) flat (non-vicinal) surfaces is enhanced by a Si/SiO2 interface. The oxide layer also influences the signals due to the steps on vicinal surfaces. The results are discussed in comparison with a microscopic model of the oxidized misoriented surface.

Monitoring surface structure and interfacial properties via second harmonic generation

1987 ◽  
Vol 59 (10) ◽  
pp. 1263-1268 ◽  
Author(s):  
J. M. Robinson ◽  
H. M. Rojhantalab ◽  
V. L. Shannon ◽  
D. A. Koos ◽  
G. L. Richmond
Keyword(s):  
Second Harmonic Generation ◽  
Surface Structure ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Interfacial Properties

Surface structure enhanced second harmonic generation in organic nanofibers

2012 ◽  
Author(s):  
Jacek Fiutowski ◽  
Christian Maibohm ◽  
Oksana Kostiucenko ◽  
Andreas Osadnik ◽  
Arne Lützen ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Surface Structure ◽  
Harmonic Generation ◽  
Second Harmonic

Second-harmonic generation by an SiO_2–Si interface: influence of the oxide layer

1991 ◽  
Vol 8 (8) ◽  
pp. 1766 ◽  
Author(s):  
L. L. Kulyuk ◽  
O. A. Aktsipetrov ◽  
D. A. Shutov ◽  
E. E. Strumban
Keyword(s):  
Second Harmonic Generation ◽  
Oxide Layer ◽  
Harmonic Generation ◽  
Second Harmonic

Probing Surface Structure Quality of ZnO Nanorods by Second Harmonic Generation

2014 ◽  
Vol 26 (8) ◽  
pp. 789-792 ◽  
Author(s):  
Chung-Wei Liu ◽  
Shoou-Jinn Chang ◽  
Chih-Hung Hsiao ◽  
Ruei-Jie Huang ◽  
Yan-Shen Lin ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Surface Structure ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Zno Nanorods ◽  
Structure Quality

Chemical Modification of Surface Steps on SI(111) Vicinal Wafers: a Bonding Model for Phase Changes in Second Harmonic Generation

1993 ◽  
Vol 318 ◽  
Author(s):  
Z. Jing ◽  
G. Lucovsky ◽  
J. L. Whitten
Keyword(s):  
Second Harmonic Generation ◽  
Chemical Modification ◽  
Harmonic Generation ◽  
Anharmonic Oscillator ◽  
Second Harmonic ◽  
Incident Radiation ◽  
Phase Changes ◽  
Chemically Modified ◽  
Native Oxides ◽  
Surface Steps

ABSTRACTThere have been several studies of second harmonic generation (SHG) from chemically-modified vicinal Si(111) wafers. The SH fields contain one-fold (ψ) and three-fold (3ψ) symmetry contributions, which originate respectively from the terrace and surface step atoms. The phase of these contributions are different for native oxides, and are a function of the frequency of the incident radiation, ω. To identify the origin of these different phases for the terrace and step SH fields, we use a classical anharmonic oscillator model based on two assumptions: (a) a significant fraction of Si atoms at the steps have dangling bonds when oxides are formed below ∼850°C, and (b) these step atoms are linked to atoms at the bottom of the steps by O-Si-O groups following annealing at >900°C.

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