Rapid Evaluation of Oxidized Fatty Acid Concentration in Virgin Olive Oils Using Metal Oxide Semiconductor Sensors and Multiple Linear Regression

2009 ◽  
Vol 57 (20) ◽  
pp. 9365-9369 ◽  
Author(s):  
María Jesús Lerma-García ◽  
Ernesto F. Simó-Alfonso ◽  
Alessandra Bendini ◽  
Lorenzo Cerretani
Keyword(s):  
Fatty Acid ◽  
Linear Regression ◽  
Metal Oxide ◽  
Multiple Linear Regression ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Rapid Evaluation ◽  
Virgin Olive Oils ◽  
Olive Oils ◽  
Oxidized Fatty Acid

Electronic nose based on metal oxide semiconductor sensors as a fast alternative for the detection of adulteration of virgin olive oils

2002 ◽  
Vol 459 (2) ◽  
pp. 219-228 ◽  
Author(s):  
Ma Concepción Cerrato Oliveros ◽  
José Luis Pérez Pavón ◽  
Carmelo Garcı́a Pinto ◽  
Ma Esther Fernández Laespada ◽  
Bernardo Moreno Cordero ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electronic Nose ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Virgin Olive Oils ◽  
Olive Oils ◽  
Semiconductor Sensors

Comparison and integration of arrays of quartz resonators and metal-oxide semiconductor chemoresistors in the quality evaluation of olive oils

2001 ◽  
Vol 78 (1-3) ◽  
pp. 303-309 ◽  
Author(s):  
Corrado Di Natale ◽  
Antonella Macagnano ◽  
Sara Nardis ◽  
Roberto Paolesse ◽  
Christian Falconi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quality Evaluation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Olive Oils ◽  
Quartz Resonators

Suppression of Timing Variations due to Random Dopant Fluctuation by Back-Gate Bias in a Nanometer CMOS Inverter

2020 ◽  
Vol 13 ◽  
Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Cmos Inverter ◽  
Back Gate ◽  
Random Dopant Fluctuation ◽  
Random Dopant

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.

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