Adsorption and Interfacial Properties of Individual and Mixtures of Cationic/Nonionic Surfactants in Toluene + Water Chemical Systems

2010 ◽  
Vol 55 (9) ◽  
pp. 3817-3824 ◽  
Author(s):  
Javad Saien ◽  
Simin Asadabadi
2005 ◽  
Vol 26 (3) ◽  
pp. 297-302 ◽  
Author(s):  
Zhiqing Zhang ◽  
Guiying Xu ◽  
Fang Wang ◽  
Guangqing Du

Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.


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