Complexation Chemistry in N,N-Dimethylformamide-Based Molecular Inks for Chalcogenide Semiconductors and Photovoltaic Devices

James A. Clark; Anna Murray; Jung-min Lee; Tom S. Autrey; Andrew D. Collord; Hugh W. Hillhouse

doi:10.1021/jacs.8b09966

Complexation Chemistry in N,N-Dimethylformamide-Based Molecular Inks for Chalcogenide Semiconductors and Photovoltaic Devices

Journal of the American Chemical Society ◽

10.1021/jacs.8b09966 ◽

2018 ◽

Vol 141 (1) ◽

pp. 298-308 ◽

Cited By ~ 11

Author(s):

James A. Clark ◽

Anna Murray ◽

Jung-min Lee ◽

Tom S. Autrey ◽

Andrew D. Collord ◽

...

Keyword(s):

Photovoltaic Devices ◽

Chalcogenide Semiconductors ◽

Complexation Chemistry

Download Full-text

HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981497 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-463-C4-466

Author(s):

A. Madan ◽

W. Czubatyj ◽

J. Yang ◽

J. McGill ◽

S. R. Ovshinsky

Keyword(s):

High Efficiency ◽

Photovoltaic Devices ◽

Large Area ◽

Amorphous Si

Download Full-text

Chemical and Electrochemical Heteroepitaxial Growth of Chalcogenide Semiconductors from Solutions

MRS Proceedings ◽

10.1557/proc-451-223 ◽

1996 ◽

Vol 451 ◽

Cited By ~ 4

Author(s):

D. Lincot ◽

M. J. Furlong ◽

M. Froment ◽

R. Cortes ◽

M. C. Bernard

Keyword(s):

Heteroepitaxial Growth ◽

X Ray Diffraction ◽

Basic Principles ◽

Lattice Match ◽

X Ray ◽

Chalcogenide Semiconductors ◽

Influence Of Temperature On ◽

Deposition Processes ◽

A Site ◽

Site Selective

ABSTRACTChalcogenide semiconductors have been deposited epitaxially from aqueous solutions either chemically or electrochemically at growth rates of up to 0.7 μmhr−1. After recalling the basic principles of these deposition processes, results are presented concerning chemically deposited CdS on InP, GaP and CuInSe2 substrates, electrodeposited CdTe on InP, and CdSAnP heterostructures. Characterisation of these structures by RHEED, TEM, HRTEM, and glazing angle X ray diffraction allows to analyse the effects of substrate orientation, polarity, lattice match plus the influence of temperature on epitaxial growth. These results are discussed in terms of self organisation and a site selective growth mechanisms due to the free enegy of formation of each compound.

Download Full-text

Light-Induced Degradation in Solar Cells with Hydrogenated Amorphous Silicon-Sulfur Active Layers

MRS Proceedings ◽

10.1557/proc-715-a11.4 ◽

2002 ◽

Vol 715 ◽

Author(s):

Wei Xu ◽

P. C. Taylor

Keyword(s):

Solar Cells ◽

Practical Importance ◽

Chemical Vapor ◽

Photovoltaic Devices ◽

Sulfur Concentration ◽

Active Layers ◽

Conversion Efficiencies ◽

Hydrogenated Amorphous ◽

Secondary Ion ◽

Initial Conversion

AbstractWe have made a series of a-SiSx:H based solar cells, with a pin structure, in a multichamber plasma enhanced chemical vapor deposition (PECVD) system. The sulfur concentration ranges from zero to 5 x 1018 cm-3 as measured by secondary ion mass spectroscopy. The initial conversion efficiencies of cells in this series with sulfur concentrations ≤ 1018 cm-3 are approximately 7%. The time constants for degradation increase with increasing sulfur concentration, but not fast enough to be of practical importance in photovoltaic devices.

Download Full-text