Interplay between Localized and Free Charge Carriers Can Explain Hot Fluorescence in the CH3NH3PbBr3 Perovskite: Time-Domain Ab Initio Analysis

2017 ◽  
Vol 139 (48) ◽  
pp. 17327-17333 ◽  
Author(s):  
Zhaosheng Zhang ◽  
Run Long ◽  
Marina V. Tokina ◽  
Oleg V. Prezhdo
Keyword(s):  
Ab Initio ◽  
Time Domain ◽  
Charge Carriers ◽  
Free Charge

Ab Initio Time-Domain Study of Phonon-Assisted Relaxation of Charge Carriers in a PbSe Quantum Dot

2007 ◽  
Vol 111 (12) ◽  
pp. 4871-4878 ◽  
Author(s):  
Svetlana V. Kilina ◽  
Colleen F. Craig ◽  
Dmitri S. Kilin ◽  
Oleg V. Prezhdo
Keyword(s):  
Quantum Dot ◽  
Ab Initio ◽  
Time Domain ◽  
Charge Carriers

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

Dielectric relaxation of free charge carriers in some fluorite-type solid solutions

1998 ◽  
Vol 244 ◽  
pp. 201-206 ◽  
Author(s):  
E.F. Hairetdinov ◽  
N.F. Uvarov ◽  
J.-M. Reau ◽  
P. Hagenmuller
Keyword(s):  
Dielectric Relaxation ◽  
Solid Solutions ◽  
Charge Carriers ◽  
Free Charge ◽  
Fluorite Type

scholarly journals Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Yi-Dong Luo ◽  
Yuan-Hua Lin ◽  
Xuehui Zhang ◽  
Deping Liu ◽  
Yang Shen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Double Exchange ◽  
Host Lattice ◽  
Charge Carriers ◽  
Fe Doping ◽  
Free Charge ◽  
Ferromagnetic Properties ◽  
Electrospinning Method ◽  
Fe Ions

Ni1−xFexOnanofibers with different Fe doping concentration have been synthesized by electrospinning method. An analysis of the phase composition and microstructure shows that Fe doping has no influence on the crystal structure and morphology of NiO nanofibers, which reveals that the doped Fe ions have been incorporated into the NiO host lattice. Pure NiO without Fe doping is antiferromagnetic, yet all the Fe-doped NiO nanofiber samples show obvious room-temperature ferromagnetic properties. The saturation magnetization of the nanofibers can be enhanced with increasing Fe doping concentration, which can be ascribed to the double exchange mechanism through the doped Fe ions and free charge carriers. In addition, it was found that the diameter of nanofibers has significant impact on the ferromagnetic properties, which was discussed in detail.

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