Metallization and Superconductivity in the van der Waals Compound CuP2Se through Pressure-Tuning of the Interlayer Coupling

2021 ◽  
Author(s):  
Weiwei Li ◽  
Jiajia Feng ◽  
Xiaoliang Zhang ◽  
Cong Li ◽  
Hongliang Dong ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Interlayer Coupling ◽  
Pressure Tuning

scholarly journals Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5342-5349 ◽  
Author(s):  
Evgeny M. Alexeev ◽  
Alessandro Catanzaro ◽  
Oleksandr V. Skrypka ◽  
Pramoda K. Nayak ◽  
Seongjoon Ahn ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Interlayer Coupling ◽  
Optical Microscope ◽  
Bright Field ◽  
Van Der Waals Heterostructures

scholarly journals Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Md. Sherajul Islam ◽  
Imon Mia ◽  
A. S. M. Jannatul Islam ◽  
Catherine Stampfl ◽  
Jeongwon Park
Keyword(s):  
High Temperatures ◽  
Thermal Transport ◽  
Van Der Waals ◽  
Thermal Conductance ◽  
Interlayer Coupling ◽  
Phonon Modes ◽  
Out Of Plane ◽  
System Temperature ◽  
Non Equilibrium Molecular Dynamics ◽  
Increasing Temperature

AbstractGraphene based two-dimensional (2D) van der Waals (vdW) materials have attracted enormous attention because of their extraordinary physical properties. In this study, we explore the temperature and interlayer coupling induced thermal transport across the graphene/2D-SiC vdW interface using non-equilibrium molecular dynamics and transient pump probe methods. We find that the in-plane thermal conductivity κ deviates slightly from the 1/T law at high temperatures. A tunable κ is found with the variation of the interlayer coupling strength χ. The interlayer thermal resistance R across graphene/2D-SiC interface reaches 2.71 $$\times$$ × 10–7$${\text{Km}}^{2} /{\text{W}}$$ Km 2 / W at room temperature and χ = 1, and it reduces steadily with the elevation of system temperature and χ, demonstrating around 41% and 56% reduction with increasing temperature to 700 K and a χ of 25, respectively. We also elucidate the heat transport mechanism by estimating the in-plane and out-of-plane phonon modes. Higher phonon propagation possibility and Umklapp scattering across the interface at high temperatures and increased χ lead to the significant reduction of R. This work unveils the mechanism of heat transfer and interface thermal conductance engineering across the graphene/2D-SiC vdW heterostructure.

scholarly journals Investigation on the interlayer coupling and bonding in layered nitride-halides ThNF and ThNCl

RSC Advances ◽  
2021 ◽  
Vol 11 (46) ◽  
pp. 28698-28703
Author(s):  
Xiao Liu ◽  
Da-Yong Liu ◽  
Ting-Ting Li ◽  
Dong-Meng Chen ◽  
Liang-Jian Zou
Keyword(s):  
Charge Transfer ◽  
Chemical Bond ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Li Ion

Showing that the interlayer charge transfer and chemical bond in ThNF and ThNCl are considerable larger than the van der Waals compound ZrNCl, addressing the difficulty in intercalating Li ion or other charged molecules.

scholarly journals The enhanced ferromagnetism of single-layer CrX3 (X = Br and I) via van der Waals engineering

2019 ◽  
Vol 21 (22) ◽  
pp. 11949-11955 ◽  
Author(s):  
Hongxing Li ◽  
Yuan-Kai Xu ◽  
Kang Lai ◽  
Wei-Bing Zhang
Keyword(s):  
Van Der Waals ◽  
Single Layer ◽  
Interlayer Coupling

The ferromagnetism of CrI3 and CrBr3 is enhanced by interlayer coupling.

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.

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