Interfacial Strain Engineering in Wide-Bandgap GeS Thin Films for Photovoltaics

2021 ◽  
Author(s):  
Mingjie Feng ◽  
Shun-Chang Liu ◽  
Liyan Hu ◽  
Jinpeng Wu ◽  
Xianhu Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Engineering ◽  
Wide Bandgap ◽  
Interfacial Strain

scholarly journals Strain driven emergence of topological non-triviality in YPdBi thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Vishal Bhardwaj ◽  
Anupam Bhattacharya ◽  
Shivangi Srivastava ◽  
Vladimir V. Khovaylo ◽  
Jhuma Sannigrahi ◽  
...  
Keyword(s):  
Thin Films ◽  
Heavy Fermion ◽  
Critical Role ◽  
Surface States ◽  
Strain Engineering ◽  
Emergent Properties ◽  
Spintronic Devices ◽  
Topological States ◽  
Topological Surface ◽  
Strained Films

AbstractHalf-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for developing next-generation spintronic devices.

Wide bandgap tunability of N-alloyed ZnGa2O4 thin films

2021 ◽  
Author(s):  
Wei-Kai Wang ◽  
Kuo-Feng Liu ◽  
Sung‐Yu Wang ◽  
Jian-Cheng Guo ◽  
Shih-Yung Huang
Keyword(s):  
Thin Films ◽  
Wide Bandgap

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

scholarly journals Pressure-induced monotonic enhancement of Tc to over 30 K in the superconducting Pr0.82Sr0.18NiO2 thin films

2021 ◽  
Author(s):  
Ningning Wang ◽  
Mingwei Yang ◽  
Keyu Chen ◽  
Zhen Yang ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pressure Effect ◽  
Ambient Pressure ◽  
Strain Engineering ◽  
Superconducting Properties ◽  
Liquid Pressure ◽  
Infinite Layer ◽  
Effect Of Pressure ◽  
First Time

Abstract The successful synthesis of superconducting nickelate thin films with the highest Tc ~ 15 K has reignited great enthusiasms on this class of potential analogue to high-Tc cuprates suggested decades ago. To pursue higher Tc is always an important task in studying new superconductors. Here we report for the first time the effect of pressure on the superconducting properties of infinite-layer Pr0.82Sr0.18NiO2 thin films by measuring electrical resistivity under various pressures in a cubic anvil cell apparatus. We find that the onset of superconductivity, Tconset, can be enhanced monotonically from ~ 18 K at ambient pressure to ~ 31 K without showing signatures of saturation upon increasing pressure to 12.1 GPa in the presence of liquid pressure transmitting medium. This encouraging result indicates that the Tc of infinite-layer nickelates superconductors can be further raised up by applying higher pressures or strain engineering in the heterostructure films. In addition to the pressure effect, we also discussed the influence of stress/strain on the superconducting properties of the nickelate thin films.

scholarly journals Strain engineering of multiferroic thin films

2006 ◽  
Vol 62 (a1) ◽  
pp. s122-s122 ◽  
Author(s):  
C. J. M. Daumont ◽  
P. Fonteijn ◽  
B. Noheda ◽  
G. Catalan
Keyword(s):  
Thin Films ◽  
Strain Engineering

Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films

2010 ◽  
Vol 645-648 ◽  
pp. 459-462 ◽  
Author(s):  
Oliver Erlenbach ◽  
Gonzalo Gálvez ◽  
Jorge Andres Guerra ◽  
Francisco De Zela ◽  
Roland Weingärtner ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Emission Intensity ◽  
Thermal Activation ◽  
Wide Bandgap ◽  
Isochronal Annealing ◽  
Strong Increase ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Thin Films

We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.

Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

1999 ◽  
Vol 595 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Laser Micromachining ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Aspect Ratios ◽  
Device Structures

AbstractExcimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

Sign in / Sign up

Export Citation Format

Share Document