Electronic Response of Assemblies of Designer Atoms:  The Metal−Insulator Transition and the Role of Disorder

2000 ◽  
Vol 122 (17) ◽  
pp. 4084-4091 ◽  
Author(s):  
F. Remacle ◽  
R. D. Levine
2006 ◽  
Vol 74 (6) ◽  
Author(s):  
V. Scagnoli ◽  
U. Staub ◽  
A. M. Mulders ◽  
M. Janousch ◽  
G. I. Meijer ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5158-5165 ◽  
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim

The single-VO2 nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.


RSC Advances ◽  
2018 ◽  
Vol 8 (56) ◽  
pp. 31984-31984
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim

Correction for ‘Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition’ by Y.-R. Jo et al., RSC Adv., 2018, 8, 5158–5165.


2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Jikun Chen ◽  
Wei Mao ◽  
Binghui Ge ◽  
Jiaou Wang ◽  
Xinyou Ke ◽  
...  

1996 ◽  
Vol 126 (2) ◽  
pp. 235-241 ◽  
Author(s):  
Hideki Taguchi ◽  
Masanori Sonoda ◽  
Mahiko Nagao ◽  
Hiroyasu Kido

2008 ◽  
Vol 20 (14) ◽  
pp. 145216 ◽  
Author(s):  
F Conchon ◽  
A Boulle ◽  
R Guinebretière ◽  
E Dooryhée ◽  
J-L Hodeau ◽  
...  

2006 ◽  
Vol 73 (10) ◽  
Author(s):  
V. Scagnoli ◽  
U. Staub ◽  
A. M. Mulders ◽  
M. Janousch ◽  
G. I. Meijer ◽  
...  

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