Two-Dimensional Polyaniline Thin Film Electrodeposited on a Self-Assembled Monolayer

1998 ◽  
Vol 120 (41) ◽  
pp. 10733-10742 ◽  
Author(s):  
Iva Turyan ◽  
Daniel Mandler
Keyword(s):  
Thin Film ◽  
Two Dimensional ◽  
Self Assembled Monolayer ◽  
Self Assembled

InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer With Different Alkyl Chain Length

2015 ◽  
Vol 36 (7) ◽  
pp. 687-689 ◽  
Author(s):  
Peng Xiao ◽  
Linfeng Lan ◽  
Ting Dong ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Chain Length ◽  
Thin Film Transistors ◽  
Alkyl Chain ◽  
Alkyl Chain Length ◽  
Self Assembled Monolayer ◽  
Self Assembled

InSnZnO Thin-Film Transistors With Vapor- Phase Self-Assembled Monolayer as Passivation Layer

2018 ◽  
Vol 39 (11) ◽  
pp. 1680-1683 ◽  
Author(s):  
Wei Zhong ◽  
Guoyuan Li ◽  
Linfeng Lan ◽  
Bin Li ◽  
Rongsheng Chen
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Self Assembled Monolayer ◽  
Self Assembled

Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics

2020 ◽  
Vol 14 (3) ◽  
pp. 314-322
Author(s):  
Baolin Zhao ◽  
Mikhail Feofanov ◽  
Dominik Lungerich ◽  
Hyoungwon Park ◽  
Tobias Rejek ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Self Assembled Monolayer ◽  
Self Assembled

Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Performance ◽  
Film Formation ◽  
Substrate Surface ◽  
High Surface ◽  
Thin Film Transistor ◽  
Subthreshold Slope ◽  
Self Assembled Monolayer ◽  
Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

Improvement of rubrene thin film transistor with self assembled monolayer of octadecyltrichlorosilane (OTS)

2012 ◽  
Author(s):  
S. Sinha ◽  
C. -H. Wang ◽  
A. K. M. Maidul Islam ◽  
Y. -W. Yang ◽  
M. Mukherjee
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Self Assembled Monolayer ◽  
Self Assembled

scholarly journals Significant Performance Enhancement of Very Thin InGaZnO Thin-Film Transistors by a Self-Assembled Monolayer Treatment

2020 ◽  
Vol 2 (1) ◽  
pp. 301-308 ◽  
Author(s):  
Wensi Cai ◽  
Joshua Wilson ◽  
Jiawei Zhang ◽  
Joseph Brownless ◽  
Xijian Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Self Assembled Monolayer ◽  
Significant Performance ◽  
Self Assembled
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