Improvement of rubrene thin film transistor with self assembled monolayer of octadecyltrichlorosilane (OTS)

2012 ◽  
Author(s):  
S. Sinha ◽  
C. -H. Wang ◽  
A. K. M. Maidul Islam ◽  
Y. -W. Yang ◽  
M. Mukherjee
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Self Assembled Monolayer ◽  
Self Assembled

Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics

2020 ◽  
Vol 14 (3) ◽  
pp. 314-322
Author(s):  
Baolin Zhao ◽  
Mikhail Feofanov ◽  
Dominik Lungerich ◽  
Hyoungwon Park ◽  
Tobias Rejek ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Self Assembled Monolayer ◽  
Self Assembled

Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Performance ◽  
Film Formation ◽  
Substrate Surface ◽  
High Surface ◽  
Thin Film Transistor ◽  
Subthreshold Slope ◽  
Self Assembled Monolayer ◽  
Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

Control of Charge Trap Density in Polymer Thin Film Transistor Using Self-assembled Monolayer with Different Alkyl Chain Length

Polymer Korea ◽  
2019 ◽  
Vol 43 (4) ◽  
pp. 553-558
Author(s):  
Jun Hwa Park ◽  
Yu Ra Choi ◽  
Bo Yeon Min ◽  
Jun Young Moon ◽  
Jae Won Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chain Length ◽  
Alkyl Chain ◽  
Thin Film Transistor ◽  
Alkyl Chain Length ◽  
Trap Density ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Charge Trap ◽  
Self Assembled

Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization

2013 ◽  
Vol 540 ◽  
pp. 266-270 ◽  
Author(s):  
Yosuke Tojo ◽  
Atsushi Miura ◽  
Yasuaki Ishikawa ◽  
Ichiro Yamashita ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Self Assembled Monolayer ◽  
Self Assembled

scholarly journals Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor

2007 ◽  
Vol 90 (13) ◽  
pp. 132104 ◽  
Author(s):  
Yunseok Jang ◽  
Jeong Ho Cho ◽  
Do Hwan Kim ◽  
Yeong Don Park ◽  
Minkyu Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Self Assembled Monolayer ◽  
Self Assembled

Surface Energy Characterized Self-Assembled Monolayer for Improving Electrical Stability of IGZO Thin Film Transistor

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1954-1954
Author(s):  
Sung-Eun Lee ◽  
Hyun-Jae Na ◽  
Jintaek Park ◽  
Eun Goo Lee ◽  
Kyungho Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Energy ◽  
Thin Film Transistor ◽  
Electrical Stability ◽  
Self Assembled Monolayer ◽  
Self Assembled
Sign in / Sign up

Export Citation Format

Share Document